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Title: Comprehensive Investigations on Paralleling Operation of SiC MOSFETs based on Subcircuit Model in MATLAB/SIMULINK
Wide band gap (WBG) devices have been widely applied in industrial applications owning to their advantages of low switching loss, low on-stage voltage drop, and high operating temperature. Paralleling operation of power devices/modules is attractive due to its cost-effective and high power characteristics. In applications require very high current capability, paralleling operation of off-the-shelf power devices/modules becomes the only choice. However, current balancing operation of individual power device/module becomes difficult due to the differences of circuit parasitics. To investigate the device/module and circuit parasitics influences on the current sharing performance, in this article, a subcircuit model was built in MATLAB. Comprehensive comparisons and analysis are performed, which can provide guidance for engineers when designing the system with paralleling devices/modules. Moreover, the solutions to achieve current balancing operating are proposed with the aid of active gate driver. Experiment results are presented and analyzed to validate the effectiveness of current sharing solutions.
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IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Sponsoring Org:
National Science Foundation
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