Abstract—Wide band gap (WBG) devices, like silicon carbide (SiC) MOSFET has gradually replaced the traditional silicon counterpart due to their advantages of high operating temperature and fast switching speed. Paralleling operations of SiC MOSFETs are unavoidable in high power applications in order to meet the system current requirement. However, parasitics mismatches among different paralleling devices would cause current unbalance issues, which would reduce the system reliability and maximum current capability. Thus, to achieve current balancing operation, this paper proposes a
solution of using multi-level active gate driver, where the dynamic current sharing during turn-on and turn-off processes are achieved by adjusting the delays, intermediate turn-on and turn-off voltages. The static current sharing is maintained by regulating the static turn-on gate voltage, where the on-state resistance mismatch between different devices can be
compensated. A double pulse test setup with two different SiC MOSFETs is built to emulate the scenario of worst case application with large differences of threshold voltage and on-state resistance. The experimental results demonstrate that the proposed active gate driver can achieve both dynamic and static current sharing operations for SiC MOSFETs with paralleling operation. Moreover, the system control diagram is discussed. Simulation studies are conducted to achieve closed-loop control of the paralleled SiC MOSFETs with the aid of the active gate driver approach.
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Hybrid Voltage Balancing Approach for Series-Connected SiC MOSFETs for DC–AC Medium-Voltage Power Conversion Applications
Due to its fast switching speed, the voltage sharing of series-connected SiC MOSFETs is more sensitive to the parasitic components from the power modules and the system, which results in more challenges for voltage balancing control. For two series-connected SiC MOSFETs realized by one half-bridge module, the detailed analysis and measurement indicate that the unbalanced parasitic capacitors inside the power module comprise the dominant factor causing the difference of turn-off dv/dt. In this paper, the traditional gate turn-off delay-time control is first used as an example to analyze the limitation of the existing active voltage balancing (AVB) control methods under AC load current: 1) AVB control has a limitation to adjust delay time accurately under AC current; 2) the voltage imbalance of the body diodes cannot be solved by AVB control. To achieve voltage balancing control of series-connected SiC MOSFETs and body diodes, this paper proposes a new two-part hybrid approach: 1) passive dv/dt compensation: one small compensation capacitor is applied to balance the non-uniform distribution of parasitic capacitors inside the power module, so the series-connected MOSFETs can have the same turn-off dv/dt; 2) active gate signal turn-off time adjustment: a closed-loop delay time control is applied to compensate the gate signal mismatch of MOSFETs. To verify the proposed balancing approach, a single-phase pump-back test is conducted to show the improvement of voltage sharing of both MOSFETs and body diodes.
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- Award ID(s):
- 2143488
- NSF-PAR ID:
- 10500284
- Publisher / Repository:
- IEEE
- Date Published:
- Journal Name:
- IEEE Transactions on Power Electronics
- Volume:
- 37
- Issue:
- 7
- ISSN:
- 0885-8993
- Page Range / eLocation ID:
- 8104 to 8117
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1109/TPEL.2022.3149146
