ESD Stress Effect on Failure Mechanisms in GaN-on-Si Power Device
- Award ID(s):
- 1939050
- NSF-PAR ID:
- 10318955
- Date Published:
- Journal Name:
- IEEE Transactions on Device and Materials Reliability
- Volume:
- 21
- Issue:
- 4
- ISSN:
- 1530-4388
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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