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Title: ESD Stress Effect on Failure Mechanisms in GaN-on-Si Power Device
Award ID(s):
1939050
NSF-PAR ID:
10318955
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
IEEE Transactions on Device and Materials Reliability
Volume:
21
Issue:
4
ISSN:
1530-4388
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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