We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014cm−2) Si-doped
Variable temperature probing of minority carrier transport and optical properties in p -Ga 2 O 3
Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga 2 O 3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the V Ga − –V O ++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from V Ga − –V O ++ defect complexes.
- Publication Date:
- NSF-PAR ID:
- 10322918
- Journal Name:
- APL Materials
- Volume:
- 10
- Issue:
- 3
- ISSN:
- 2166-532X
- Sponsoring Org:
- National Science Foundation
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Accepted Manuscript1.0
- Publisher's Version of Record
- https://doi.org/10.1063/5.0086449
