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1. Growth of α-Ga 2 O 3 on α-Al 2 O 3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

   https://doi.org/10.35848/1347-4065/acbe04  

   McCandless, J. P. ; Rowe, D. ; Pieczulewski, N. ; Protasenko, V. ; Alonso-Orts, M. ; Williams, M. S. ; Eickhoff, M. ; Xing, H. G. ; Muller, D. A. ; Jena, D. ; et al ( March 2023 , Japanese Journal of Applied Physics)

   Abstract We report the growth of α -Ga 2 O 3 on m -plane α -Al 2 O 3 by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal–oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α -Ga 2 O 3 ( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of α -Ga 2 O 3 . Through the use of In-mediated catalysis, growth rates over 0.2 μ m h −1 and rocking curves with full width at half maxima of Δ ω ≈ 0.45° are achieved. Faceting is observed along the α -Ga 2 O 3 film surface and explored through scanning transmission electron microscopy. 

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2. Freestanding epitaxial SrTiO 3 nanomembranes via remote epitaxy using hybrid molecular beam epitaxy

   https://doi.org/10.1126/sciadv.add5328  

   Yoon, Hyojin ; Truttmann, Tristan K. ; Liu, Fengdeng ; Matthews, Bethany E. ; Choo, Sooho ; Su, Qun ; Saraswat, Vivek ; Manzo, Sebastian ; Arnold, Michael S. ; Bowden, Mark E. ; et al ( December 2022 , Science Advances)

   Hybrid MBE produces epitaxial SrTiO 3 free-standing nanomembranes using remote epitaxy in an adsorption-controlled manner. 

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3. Van der Waals epitaxy and remote epitaxy of LiNbO 3 thin films by pulsed laser deposition

   https://doi.org/10.1116/6.0001109  

   Jia, Ru ; Kum, Hyun S. ; Sun, Xin ; Guo, Yuwei ; Wang, Baiwei ; Fang, Peijiao ; Jiang, Jie ; Gall, Daniel ; Lu, Toh-Ming ; Washington, Morris ; et al ( July 2021 , Journal of Vacuum Science & Technology A)
4. Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

   https://doi.org/10.1063/5.0090373  

   Ryu, Huije ; Park, Hyunik ; Kim, Joung-Hun ; Ren, Fan ; Kim, Jihyun ; Lee, Gwan-Hyoung ; Pearton, Stephen J. ( September 2022 , Applied Physics Reviews)

   Epitaxial growth, a crystallographically oriented growth induced by the chemical bonding between crystalline substrate and atomic building blocks, has been a key technique in the thin-film and heterostructure applications of semiconductors. However, the epitaxial growth technique is limited by different lattice mismatch and thermal expansion coefficients of dissimilar crystals. Two-dimensional (2D) materials with dangling bond-free van der Waals surfaces have been used as growth templates for the hetero-integration of highly mismatched materials. Moreover, the ultrathin nature of 2D materials also allows for remote epitaxial growth and confinement growth of quasi-2D materials via intercalation. Here, we review the hetero-dimensional growth on 2D substrates: van der Waals epitaxy (vdWE), quasi vdWE, and intercalation growth. We discuss the growth mechanism and fundamental challenges for vdWE on 2D substrates. We also examine emerging vdWE techniques that use epitaxial liftoff and confinement epitaxial growth in detail. Finally, we give a brief review of radiation effects in 2D materials and contrast the damage induced with their 3D counterparts.

    

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5. Self-regulated growth of [111]-oriented perovskite oxide films using hybrid molecular beam epitaxy

   https://doi.org/10.1063/5.0040047  

   Roth, Joseph ; Kuznetsova, Tatiana ; Miao, Leixin ; Pogrebnyakov, Alexej ; Alem, Nasim ; Engel-Herbert, Roman ( February 2021 , APL Materials)

   Exotic material properties and topological nontrivial surface states have been theoretically predicted to emerge in [111]-oriented perovskite layers. The realization of such [111]-oriented perovskite superlattices has been found challenging, and even the growth of perovskite oxide films along this crystallographic direction has been proven as a formidable task, attributed to the highly polar character of the perovskite (111) surface. Successful epitaxial growth along this direction has so far been limited to thin film deposition techniques involving a relatively high kinetic energy, specifically pulsed laser deposition and sputtering. Here, we report on the self-regulated growth of [111]-oriented high-quality SrVO3 by hybrid molecular beam epitaxy. The favorable growth kinetics available for the growth of perovskite oxides by hybrid molecular beam epitaxy on non-polar surfaces was also present for the growth of [111]-oriented films, resulting in high-quality SrVO3(111) thin films with residual resistivity ratios exceeding 20. The ability to grow high-quality perovskite oxides along energetically unfavorable crystallographic directions using hybrid molecular beam epitaxy opens up opportunities to study the transport properties of topological nontrivial and correlated electron systems.

    

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