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1. Photovoltaic Response of Thin-Film CdTe Solar Cells under Accelerated Neutron Radiation in a TRIGA Reactor

   Powell, Kaden ; Lund, Matthew ; Wang, Meng-Jen ; Qian, Yang ; Magginetti, David ; Reese, Matthew ; Cazalas, Edward ; Sjoden, Glenn ; Yoon, Heayoung ( June 2020 , Electronic Materials Symposium)

   Cadmium telluride (CdTe) solar cells are a promising photovoltaic (PV) technology for producing power in space owing to their high-efficiency (> 22.1 %), potential for specific power, and cost-effective manufacturing processes. In contrast to traditional space PVs, the high-Z (atomic number) CdTe absorbers can be intrinsically robust under extreme space radiation, offering long-term stability. Despite these advantages, the performance assessment of CdTe solar cells under high-energy particle irradiation (e.g., photons, neutrons, charged particles) is limited in the literature, and their stability is not comprehensively studied. In this work, we present the PV response of n-CdS / p-CdTe PVs under accelerated neutron irradiation. We measure PV properties of the devices at different neutron/photon doses. The equivalent dose deposited in the CdTe samples is simulated with deterministic and Monte Carlo radiation transport methods. Thin-film CdTe solar cells were synthesized on a fluorine-doped tin oxide (FTO) coated glass substrate (≈ 4 cm × 4 cm). CdS:O (≈ 100 nm) was reactively RF sputtered in an oxygen/argon ambient followed by a close-spaced sublimation deposition of CdTe (≈ 3.5 μm) in an oxygen/helium ambient. The sample was exposed to a 10 min vapor CdCl2 in oxygen/helium ambient at 430˚C. The samples were exposed to amore »wet CuCl2 solution prior to anneal 200ºC. A gold back-contact was formed on CdTe via thermal evaporation. The final sample contains 16 CdTe devices. For neutron irradiation, we cleaved the CdTe substrate into four samples and exposed two samples to ≈ 90 kW reactor power neutron radiation for 5.5 hours and 8.2 hours, respectively, in our TRIGA (Training, Research, Isotopes, General Atomics) reactor. We observed a noticeable color change of the glass substrates to brown after the neutron/gamma reactor exposure. Presumably, the injected high-energy neutrons caused the breaking of chemical bonds and the displacement of atoms in the glass substrates, creating point defects and color centers. The I-V characteristics showed noticeable deterioration with over 8 hour radiations. Specifically, the saturation current of the control devices was ≈ 25 nA increasing to 1 μA and 10 μA for the 5.5-hour and 8.2-hour radiated samples, respectively. The turn-on voltage of the control devices (≈ 0.85 V) decreased with the irradiated sample (≈ 0.75 V for 5.5-hour and ≈ 0.5 V for 8.2-hour exposures), implying noticeable radiation damage occurred at the heterojunction. The higher values of the ideality factor for irradiated devices (n > 2.2) compared to that of the control devices (n ≈ 1.3) also support the deterioration of the p-n junction. We observed the notable decrease in shunt resistance (RSH) and the increase in series resistance (Rs) with the neutron dose. It is possible that Cu ions introduced during the CuCl2 treatment may migrate into CdTe grain boundaries (GBs). The presence of Cu ions at GBs can create additional leakage paths for photocarrier transport, deteriorating the overall PV performance. We estimated the radiation dose of CdTe in comparison to Si (conventional PV) using a UUTR model (e.g., MCNP6 2D UTR Reactor simulations). In this model, we simulated Si and CdTe at the center point of the triangular fuel lattice and used an “unperturbed flux” tally in the water. Our simulations yielded a dose rate of 6916 Gy/s of neutrons and 16 Gy/s of photons for CdTe, and 1 Gy/s of neutrons and 21 Gy/s of photons for Si (doses +/- <1%). The large dose rate of neutrons in CdTe is mainly attributed to the large thermal neutron absorption cross-section of 113Cd. Based on this estimation, we calculate that the exposure of our CdTe PVs is equivalent to several million years in LEO (Low-Earth Orbit), or about 10,000 years for Si in LEO. Currently, we are working on a low-dose neutron/photon radiation on CdTe PVs and their light I-Vs and microstructural characterizations to gain better understanding on the degradation of CdTe PVs.« less
2. Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

   https://doi.org/10.1038/s41598-019-56816-x  

   Ryu, Hojoon ; Wu, Haonan ; Rao, Fubo ; Zhu, Wenjuan ( December 2019 , Scientific Reports)

   Ferroelectric tunneling junctions (FTJs) with tunable tunneling electroresistance (TER) are promising for many emerging applications, including non-volatile memories and neurosynaptic computing. One of the key challenges in FTJs is the balance between the polarization value and the tunneling current. In order to achieve a sizable on-current, the thickness of the ferroelectric layer needs to be scaled down below 5 nm. However, the polarization in these ultra-thin ferroelectric layers is very small, which leads to a low tunneling electroresistance (TER) ratio. In this paper, we propose and demonstrate a new type of FTJ based on metal/Al₂O₃/Zr-doped HfO₂/Si structure. The interfacial Al₂O₃layer and silicon substrate enable sizable TERs even when the thickness of Zr-doped HfO₂(HZO) is above 10 nm. We found that F-N tunneling dominates at read voltages and that the polarization switching in HZO can alter the effective tunneling barrier height and tune the tunneling resistance. The FTJ synapses based on Al₂O₃/HZO stacks show symmetric potentiation/depression characteristics and widely tunable conductance. We also show that spike-timing-dependent plasticity (STDP) can be harnessed from HZO based FTJs. These novel FTJs will have high potential in non-volatile memories and neural network applications.
3. Exploring the practical efficiency limit of silicon solar cells using thin solar-grade substrates

   https://doi.org/10.1039/d0ta04575f  

   Augusto, A. ; Karas, J. ; Balaji, P. ; Bowden, S. G. ; King, R. R. ( August 2020 , Journal of Materials Chemistry A)

   Multiple silicon solar cell technologies have surpassed or are close to surpassing 26% efficiency. Dielectric and amorphous silicon-based passivation layers combined with minimal metal/silicon contact areas were responsible for reducing the surface saturation current density below 3 fA cm −2 . At open-circuit, in passivated contact solar cells, the recombination is mainly from fundamental mechanisms (Auger and radiative) representing over 3/4 of the total recombination. At the maximum power point, the fundamental recombination fraction can drop to half, as surface and bulk Shockley–Read–Hall step in. As a result, to further increase the performance at the operating point, it is paramount to reduce the bulk dependence and secure proper surface passivation. Bulk recombination can be mitigated either by reducing bulk defect density or by reducing the wafer thickness. We demonstrate that for commercially-viable solar-grade silicon, thinner wafers and surface saturation current densities below 1 fA cm −2 , are required to significantly increase the practical efficiency limit of solar cells up to 0.6% absolute. For a high-quality n-type bulk silicon minority-carrier lifetime of 10 ms, the optimum wafer thickness range is 40–60 μm, a very different value from 110 μm previously calculated assuming undoped substrates and solely Auger and radiative recombination.more »In this thickness range surface saturation current densities near 0.1 fA cm −2 are required to narrow the gap towards the fundamental efficiency limit. We experimentally demonstrate surface saturation currents below 0.5 fA cm −2 on pi/CZ/in structures across different wafer thicknesses (35–170 μm), with potential to reach open-circuit voltages close to 770 mV and bandgap-voltage offsets near 350 mV. Finally, we use the bandgap-voltage offset as a metric to compare the quality of champion experimental solar cells in the literature, for the most commercially-relevant photovoltaic cell absorbers and architectures.« less
4. Broadband lightweight flat lenses for long-wave infrared imaging

   https://doi.org/10.1073/pnas.1908447116  

   Meem, Monjurul ; Banerji, Sourangsu ; Majumder, Apratim ; Vasquez, Fernando Guevara ; Sensale-Rodriguez, Berardi ; Menon, Rajesh ( October 2019 , Proceedings of the National Academy of Sciences)

   We experimentally demonstrate imaging in the long-wave infrared (LWIR) spectral band (8 μm to 12 μm) using a single polymer flat lens based upon multilevel diffractive optics. The device thickness is only 10 μm, and chromatic aberrations are corrected over the entire LWIR band with one surface. Due to the drastic reduction in device thickness, we are able to utilize polymers with absorption in the LWIR, allowing for inexpensive manufacturing via imprint lithography. The weight of our lens is less than 100 times those of comparable refractive lenses. We fabricated and characterized 2 different flat lenses. Even with about 25% absorption losses, experiments show that our flat polymer lenses obtain good imaging with field of view of 35° and angular resolution less than 0.013°. The flat lenses were characterized with 2 different commercial LWIR image sensors. Finally, we show that, by using lossless, higher-refractive-index materials like silicon, focusing efficiencies in excess of 70% can be achieved over the entire LWIR band. Our results firmly establish the potential for lightweight, ultrathin, broadband lenses for high-quality imaging in the LWIR band.
5. Characterization of the Direct Write Inkjet Printing Process for Automated Fabrication of PEDOT: PSS Thin Films

   https://doi.org/10.1115/msec2022-85409  

   Morice, Sara ; Sherehiy, Andriy ; Wei, Danming ; Popa, Dan O. ( June 2022 , ASME 2022 17th International Manufacturing Science and Engineering Conference)

   Direct write Inkjet Printing is a versatile additive manufacturing technology that allows for the fabrication of multiscale structures with dimensions spanning from nano to cm scale. This is made possible due to the development of novel dispensing tools, enabling controlled and precise deposition of fluid with a wide range of viscosities (1 – 50 000 mPas) in nanoliter volumes. As a result, Inkjet printing has been recognized as a potential low-cost alternative for several established manufacturing methods, including cleanroom fabrication. In this paper, we present a characterization study of PEDOT: PSS polymer ink deposition printing process realized with the help of an automated, custom Direct Write Inkjet system. PEDOT: PSS is a highly conductive ink that possesses good film forming capabilities. Applications thus include printing thin films on flexible substrates for tactile (touch) sensors. We applied the Taguchi Design of Experiment (DOE) method to produce the optimal set of PEDOT:PSS ink dispensing parameters, to study their influence on the resulting ink droplet diameter. We experimentally determined that the desired outcome of a printed thin film with minimum thickness is directly related to 1) the minimum volume of dispensed fluid and 2) the presence of a preprocessing step, namely airmore »plasma treatment of the Kapton substrate. Results show that an ink deposit with a minimum diameter of 482 μm, and a thin film with approximately 300 nm thickness were produced with good repeatability.

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