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1. Hadronic signatures from magnetically dominated baryon-loaded AGN jets

   https://doi.org/10.1093/mnras/stac3190  

   Petropoulou, Maria ; Psarras, Filippos ; Giannios, Dimitrios ( November 2022 , Monthly Notices of the Royal Astronomical Society)

   Blazars are a rare class of active galactic nuclei (AGNs) with relativistic jets pointing towards the observer. Jets are thought to be launched as Poynting-flux dominated outflows that accelerate to relativistic speeds at the expense of the available magnetic energy. In this work, we consider electron–proton jets and assume that particles are energized via magnetic reconnection in parts of the jet where the magnetization is still high (σ ≥ 1). The magnetization and bulk Lorentz factor Γ are related to the available jet energy per baryon as μ = Γ(1 + σ). We adopt an observationally motivated relation between Γ and the mass accretion rate into the black hole $\dot{m}$, which also controls the luminosity of external radiation fields. We numerically compute the photon and neutrino jet emission as a function of μ and σ. We find that the blazar SED is produced by synchrotron and inverse Compton radiation of accelerated electrons, while the emission of hadronic-related processes is subdominant except for the highest magnetization considered. We show that low-luminosity blazars (Lγ ≲ 1045 erg s−1) are associated with less powerful, slower jets with higher magnetizations in the jet dissipation region. Their broad-band photon spectra resemble those of BL Lac objects, and the expected neutrino luminosity is $L_{\nu +\bar{\nu }}\sim (0.3-1)\, L_{\gamma }$. High-luminosity blazars (Lγ ≫ 1045 erg s−1) are associated with more powerful, faster jets with lower magnetizations. Their broad-band photon spectra resemble those of flat spectrum radio quasars, and they are expected to be dim neutrino sources with $L_{\nu +\bar{\nu }}\ll L_{\gamma }$.

    

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2. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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3. Extreme Energy Spectra of Relativistic Electron Flux in the Outer Radiation Belt

   https://doi.org/10.1029/2022JA031038  

   Mourenas, D. ; Artemyev, A. V. ; Zhang, X. ‐J. ; Angelopoulos, V. ( November 2022 , Journal of Geophysical Research: Space Physics)

   Electron diffusion by whistler‐mode chorus waves is one of the key processes controlling the dynamics of relativistic electron fluxes in the Earth's radiation belts. It is responsible for the acceleration of sub‐relativistic electrons injected from the plasma sheet to relativistic energies as well as for their precipitation and loss into the atmosphere. Based on analytical estimates of chorus wave‐driven quasi‐linear electron energy and pitch‐angle diffusion rates, we provide analytical steady‐state solutions to the corresponding Fokker‐Planck equation for the relativistic electron distribution and flux. The impact on these steady‐state solutions of additional electromagnetic ion cyclotron waves, and of ultralow frequency waves are examined. Such steady‐state solutions correspond to hard energy spectra at 1–4 MeV, dangerous for satellite electronics, and represent attractors for the system dynamics in the presence of sufficiently strong driving by continuous injections of 10–300 keV electrons. Therefore, these analytical steady‐state solutions provide a simple means for estimating the most extreme electron energy spectra potentially encountered in the outer radiation belt, despite the great variability of injections and plasma conditions. These analytical steady‐state solutions are compared with numerical simulations based on the full Fokker‐Planck equation and with relativistic electron flux spectra measured by satellites during one extreme event and three strong events of high time‐integrated geomagnetic activity, demonstrating a good agreement.

    

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4. Numerical Modeling of Suprathermal Electron Transport in the Solar Wind: Effects of Whistler Turbulence with a Full Diffusion Tensor

   https://doi.org/10.3847/1538-4357/ac36c9  

   Tang, Bofeng ; Zank, Gary P. ; Kolobov, Vladimir I. ( January 2022 , The Astrophysical Journal)

   Abstract The electron VDF in the solar wind consists of a Maxwellian core, a suprathermal halo, a field-aligned component strahl, and an energetic superhalo that deviates from the equilibrium. Whistler wave turbulence is thought to resonantly scatter the observed electron velocity distribution. Wave–particle interactions that contribute to Whistler wave turbulence are introduced into a Fokker–Planck kinetic transport equation that describes the interaction between the suprathermal electrons and the Whistler waves. A recent numerical approach for solving the Fokker–Planck kinetic transport equation has been extended to include a full diffusion tensor. Application of the extended numerical approach to the transport of solar wind suprathermal electrons influenced by Whistler wave turbulence is presented. Comparison and analysis of the numerical results with observations and diagonal-only model results are made. The off-diagonal terms in the diffusion tensor act to depress effects caused by the diagonal terms. The role of the diffusion coefficient on the electron heat flux is discussed. 

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5. Geant4 simulations of x-ray photon pileup produced by runaway electrons in streamer discharges

   https://doi.org/10.1063/5.0086579  

   Pantuso, J. G. ; da Silva, C. L. ; Sanchez, J. T. ; Bowers, G. S. ( May 2022 , Physics of Plasmas)

   Runaway electron acceleration is the keystone process responsible for the production of energetic radiation by lightning and thunderstorms. In the laboratory, it remains undetermined if runaway electrons are merely a consequence of high electric fields produced at the ionization fronts of electrical discharges, or if they impact the discharge formation and propagation. In this work, we simulate photon pileup in a detector next to a spark gap. We compare laboratory measurements to ensembles of monoenergetic electron beam simulations performed with Geant4 (using the Monte Carlo method). First, we describe the x-ray emission properties of monoenergetic beams with initial energies in the 20 to 75 keV range. Second, we introduce a series of techniques to combine monoenergetic beams to produce general-shape electron energy spectra. Third, we proceed to attempt to fit the experimental data collected in the laboratory, and to discuss the ambiguities created by photon pileup and how it constrains the amount of information that can be inferred from the measurements. We show that pileup ambiguities arise from the fact that every single monoenergetic electron beam produces photon deposited energy spectra of similar qualitative shape and that increasing the electron count in any beam has the same qualitative effect of shifting the peak of the deposited energy spectrum toward higher energies. The best agreement between simulations and measurements yields a mean average error of 8.6% and a R-squared value of 0.74. 

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