Due to the separate memory and computation units in traditional Von-Neumann architecture, massive data transfer dominates the overall computing system’s power and latency, known as the ‘Memory-Wall’ issue. Especially with ever-increasing deep learning-based AI model size and computing complexity, it becomes the bottleneck for state-of-the-art AI computing systems. To address this challenge, In-Memory Computing (IMC) based Neural Network accelerators have been widely investigated to support AI computing within memory. However, most of those works focus only on inference. The on-device training and continual learning have not been well explored yet. In this work, for the first time, we introduce on-device continual learning with STT-assisted-SOT (SAS) Magnetic Random Access Memory (MRAM) based IMC system. On the hardware side, we have fabricated a SAS-MRAM device prototype with 4 Magnetic Tunnel Junctions (MTJ, each at 100nm × 50nm) sharing a common heavy metal layer, achieving significantly improved memory writing and area efficiency compared to traditional SOT-MRAM. Next, we designed fully digital IMC circuits with our SAS-MRAM to support both neural network inference and on-device learning. To enable efficient on-device continual learning for new task data, we present an 8-bit integer (INT8) based continual learning algorithm that utilizes our SAS-MRAM IMC-supported bit-serial digital in-memory convolution operations to train a small parallel reprogramming Network (Rep-Net) while freezing the major backbone model. Extensive studies have been presented based on our fabricated SAS-MRAM device prototype, cross-layer device-circuit benchmarking and simulation, as well as the on-device continual learning system evaluation.
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Rep-Net: Efficient On-Device Learning via Feature Reprogramming
Transfer learning, where the goal is to transfer the well-trained deep learning models from a primary source task to a new task, is a crucial learning scheme for on-device machine learning, due to the fact that IoT/edge devices collect and then process massive data in our daily life. However, due to the tiny memory constraint in IoT/edge devices, such on-device learning requires ultra-small training memory footprint, bringing new challenges for memory-efficient learning. Many existing works solve this problem by reducing the number of trainable parameters. However, this doesn't directly translate to memory-saving since the major bottleneck is the activations, not parameters. To develop memory-efficient on-device transfer learning, in this work, we are the first to approach the concept of transfer learning from a new perspective of intermediate feature reprogramming of a pre-trained model (i.e., backbone). To perform this lightweight and memory-efficient reprogramming, we propose to train a tiny Reprogramming Network (Rep-Net) directly from the new task input data, while freezing the backbone model. The proposed Rep-Net model interchanges the features with the backbone model using an activation connector at regular intervals to mutually benefit both the backbone model and Rep-Net model features. Through extensive experiments, we validate each design specs of the proposed Rep-Net model in achieving highly memory-efficient on-device reprogramming. Our experiments establish the superior performance (i.e., low training memory and high accuracy) of Rep-Net compared to SOTA on-device transfer learning schemes across multiple benchmarks.
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- PAR ID:
- 10348280
- Date Published:
- Journal Name:
- IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR)
- Page Range / eLocation ID:
- 12277-12286
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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