In this paper, we propose a new approach for robust compressive sensing (CS) using memristor crossbars that are constructed by recently invented memristor devices. The exciting features of a memristor crossbar, such as high density, low power and great scalability, make it a promising candidate to perform large-scale matrix operations. To apply memristor crossbars to solve a robust CS problem, the alternating directions method of multipliers (ADMM) is employed to split the original problem into subproblems that involve the solution of systems of linear equations. A system of linear equations can then be solved using memristor crossbars with astonishing O(1) time complexity. We also study the impact of hardware variations on the memristor crossbar based CS solver from both theoretical and practical points of view. The resulting overall complexity is given by O(n), which achieves O(n2.5) speed-up compared to the state-of-the-art software approach. Numerical results are provided to illustrate the effectiveness of the proposed CS solver.
Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration
Memristor devices have been extensively studied as one of the most promising technologies for next-generation non-volatile memory. However, for the memristor devices to have a real technological impact, they must be densely packed in a large crossbar array (CBA) exceeding Gigabytes in size. Devising a selector device that is CMOS compatible, 3D stackable, and has a high non-linearity (NL) and great endurance is a crucial enabling ingredient to reach this goal. Tunneling based selectors are very promising in these aspects, but the mediocre NL value limits their applications in large passive crossbar arrays. In this work, we demonstrated a trilayer tunneling selector based on the Ge/Pt/TaN 1+x /Ta 2 O 5 /TaN 1+x /Pd layers that could achieve a NL of 3 × 10 5 , which is the highest NL achieved using a tunnel selector so far. The record-high tunneling NL is partially attributed to the bottom electrode's ultra-smoothness (BE) induced by a Ge/Pt layer. We further demonstrated the feasibility of 1S1R (1-selector 1-resistor) integration by vertically integrating a Pd/Ta 2 O 5 /Ru based memristor on top of the proposed selector.
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- Frontiers in Nanotechnology
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- National Science Foundation
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