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1. Imprints of temperature fluctuations on the z ∼ 5 Lyman-α forest: a view from radiation-hydrodynamic simulations of reionization

   https://doi.org/10.1093/mnras/stz2807  

   Wu, Xiaohan ; McQuinn, Matthew ; Kannan, Rahul ; D’Aloisio, Anson ; Bird, Simeon ; Marinacci, Federico ; Davé, Romeel ; Hernquist, Lars ( October 2019 , Monthly Notices of the Royal Astronomical Society)

   Reionization leads to large spatial fluctuations in the intergalactic temperature that can persist well after its completion. We study the imprints of such fluctuations on the $z$ ∼ 5 Ly α forest flux power spectrum using a set of radiation-hydrodynamic simulations that model different reionization scenarios. We find that large-scale coherent temperature fluctuations bring ${\sim}20\text{--}60{{\ \rm per\ cent}}$ extra power at k ∼ 0.002 s km−1, with the largest enhancements in the models where reionization is extended or ends the latest. On smaller scales (k ≳ 0.1 s km−1), we find that temperature fluctuations suppress power by ${\lesssim}10{{\ \rm per\ cent}}$. We find that the shape of the power spectrum is mostly sensitive to the reionization mid-point rather than temperature fluctuations from reionization’s patchiness. However, for all of our models with reionization mid-points of $z$ ≤ 8 ($z$ ≤ 12), the shape differences are ${\lesssim}20{{\ \rm per\ cent}}$ (${\lesssim}40{{\ \rm per\ cent}}$) because of a surprisingly well-matched cancellation between thermal broadening and pressure smoothing that occurs for realistic thermal histories. We also consider fluctuations in the ultraviolet background, finding their impact on the power spectrum to be much smaller than temperature fluctuations at k ≳ 0.01 s km−1. Furthermore, we compare our models to power spectrummore »measurements, finding that none of our models with reionization mid-points of $z$ < 8 is strongly preferred over another and that all of our models with mid-points of $z$ ≥ 8 are excluded at 2.5σ. Future measurements may be able to distinguish between viable reionization models if they can be performed at lower k or, alternatively, if the error bars on the high-k power can be reduced by a factor of 1.5.

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2. Improved Discrete Random Walk Stochastic Model for Simulating Particle Dispersion and Deposition in Inhomogeneous Turbulent Flows

   https://doi.org/10.1115/1.4047538  

   Mofakham, Amir A. ; Ahmadi, Goodarz ( October 2020 , Journal of Fluids Engineering)

   Abstract The performance of different versions of the discrete random walk models in turbulent flows with nonuniform normal root-mean-square (RMS) velocity fluctuations and turbulence time scales were carefully investigated. The OpenFOAM v2−f low Reynolds number turbulence model was used for evaluating the fully developed streamwise velocity and the wall-normal RMS velocity fluctuations profiles in a turbulent channel flow. The results were then used in an in-house matlab particle tracking code, including the drag and Brownian forces, and the trajectories of randomly injected point-particles with diameters ranging from 10 nm to 30 μm were evaluated under the one-way coupling assumption. The distributions and deposition velocities of fluid-tracer and finite-size particles were evaluated using the conventional-discrete random walk (DRW) model, the modified-DRW model including the velocity gradient drift correction, and the new improved-DRW model including the velocity and time gradient drift terms. It was shown that the conventional-DRW model leads to superfluous migration of fluid-point particles toward the wall and erroneous particle deposition rate. The concentration profiles of tracer particles obtained by using the modified-DRW model still are not uniform. However, it was shown that the new improved-DRW model with the velocity and time scale drift corrections leads to uniform distributions for fluid-point particlesmore »and reasonable concentration profiles for finite-size heavy particles. In addition, good agreement was found between the estimated deposition velocities of different size particles by the new improved-DRW model with the available data.« less
3. (Digital Presentation) Activating the Ion Transmission at the Cathode-Electrolyte Interface in All-Solid-State Batteries

   https://doi.org/10.1149/MA2022-012384mtgabs  

   Zhang, Yuxuan ; Kivevele, Thomas ; Song, Han Wook ; Lee, Sunghwan ( July 2022 , ECS Meeting Abstracts)

   All-solid-state batteries (ASSBs) have garnered increasing attention due to the enhanced safety, featuring nonflammable solid electrolytes as well as the potential to achieve high energy density. 1 The advancement of the ASSBs is expected to provide, arguably, the most straightforward path towards practical, high-energy, and rechargeable batteries based on metallic anodes. 1 However, the sluggish ion transmission at the cathode-electrolyte (solid/solid) interface would result in the high resistant at the contact and limit the practical implementation of these all solid-state materials in real world batteries. 2 Several methods were suggested to enhance the kinetic condition of the ion migration between the cathode and the solid electrolyte (SE). 3 A composite strategy that mixes active materials and SEs for the cathode is a general way to decrease the ion transmission barrier at the cathode-electrolyte interface. 3 The active material concentration in the cathode is reduced as much as the SE portion increases by which the energy density of the ASSB is restricted. In addition, the mixing approach generally accompanies lattice mismatches between the cathode active materials and the SE, thus providing only limited improvements, which is imputed by random contacts between the cathode active materials and the SE during the mixingmore »process. Implementing high-pressure for the electrode and electrolyte of ASSB in the assembling process has been verified is a but effective way to boost the ion transmission ability between the cathode active materials and the SE by decreasing the grain boundary impedance. Whereas the short-circuit of the battery would be induced by the mechanical deformation of the electrolyte under high pressure. 4 Herein, we demonstrate a novel way to address the ion transmission problem at the cathode-electrolyte interface in ASSBs. Starting from the cathode configuration, the finite element method (FEM) was employed to evaluate the current concentration and the distribution of the space charge layer at the cathode-electrolyte interface. Hierarchical three-dimensional (HTD) structures are found to have a higher Li + transfer number (t Li+ ), fewer free anions, and the weaker space-charge layer at the cathode-electrolyte interface in the resulting FEM simulation. To take advantage of the HTD structure, stereolithography is adopted as a manufacturing technique and single-crystalline Ni-rich (SCN) materials are selected as the active materials. Next, the manufactured HTD cathode is sintered at 600 °C in an N 2 atmosphere for the carbonization of the resin, which induces sufficient electronic conductivity for the cathode. Then, the gel-like Li 1.4 Al 0.4 Ti 1.6 (PO 4 ) 3 (LATP) precursor is synthesized and filled into the voids of the HTD structure cathode sufficiently. And the filled HTD structure cathodes are sintered at 900 °C to achieve the crystallization of the LATP gel. Scanning transmission electron microscopy (STEM) is used to unveil the morphology of the cathode-electrolyte interface between the sintered HTD cathode and the in-situ generated electrolyte (LATP). A transient phase has been found generated at the interface and matched with both lattices of the SCN and the SE, accelerating the transmission of the Li-ions, which is further verified by density functional theory calculations. In addition, Electron Energy Loss Spectroscopy demonstrates the preserved interface between HTD cathode and SEs. Atomic force microscopy is employed to measure the potential image of the cross-sectional interface by the peak force tapping mode. The average potential of modified samples is lower than the sample that mix SCN and SEs simply in the 2D planar structure, which confirms a weakened space charge layer by the enhanced contact capability as well as the ion transmission ability. To see if the demonstrated method is universally applicable, LiNi 0.8 Co 0.1 Mn 0.1 O 2 (NCM811) is selected as the cathode active material and manufactured in the same way as the SCN. The HTD cathode based on NCM811 exhibits higher electrochemical performance compared with the reference sample based on the 2D planar mixing-type cathode. We believe such a demonstrated universal strategy provides a new guideline to engineer the cathode/electrolyte interface by revolutionizing electrode structures that can be applicable to all-solid-state batteries. Figure 1. Schematic of comparing of traditional 2D planar cathode and HTD cathode in ASSB Tikekar, M. D. , et al. , Nature Energy (2016) 1 (9), 16114 Banerjee, A. , et al. , Chem Rev (2020) 120 (14), 6878 Chen, R. , et al. , Chem Rev (2020) 120 (14), 6820 Cheng, X. , et al. , Advanced Energy Materials (2018) 8 (7) Figure 1« less
4. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K.more »The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
5. Mesoscale and Small-Scale Structure of the Subauroral Geospace

   https://doi.org/10.1002/9781119815617.ch8  

   E.V. Mishin and A.V. Streltsov ( March 2021 , Ionosphere Dynamics and Applications)

   :Chaosong Huang, Gang Lu (Ed.)

   A review is given of the current state-of-the-art of experimental studies and the theoretical understanding of meso-scale and small-scale structure of the subauroral geospace, connecting ionospheric structures to plasma wave processes in the turbulent plasmasphere boundary layer (TPBL). Free energy for plasma waves comes from diamagnetic electron and ion currents in the entry layer near the plasma sheet boundary and near the TPBL inner boundary, respectively, and anisotropic distributions of energetic ions inside the TPBL and interior to the inner boundary. Collisionless heating of the plasmaspheric particles gives downward heat and suprathermal electron fluxes sufficient to provide the F-region electron temperature greater than 6000 K. This leads to the formation of specific density troughs in the ionospheric regions in the absence of strong electric fields and upward plasma flows. Small-scale MHD wave structures (SAPSWS) and irregular density troughs emerge on the duskside, coincident with the substorm current wedge development. Numerical simulations show that the ionospheric feedback instability significantly contributes to the SAPSWS formation. Antiparallel temperature and density gradients inside the subauroral troughs lead to the temperature gradient instability. The latter and the gradient-drift instability lead to enhanced decameter-scale irregularities responsible for subauroral HF radar backscatter