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Title: Dynamic Switching of 1.9 A/1.76 kV Forward Current NiO/β-Ga 2 O 3 Rectifiers
The switching performance of unpackaged vertical geometry NiO/ β -Ga 2 O 3 rectifiers with a reverse breakdown voltage of 1.76 kV (0.1 cm diameter, 7.85 × 10 −3 cm 2 area) and an absolute forward current of 1.9 A fabricated on 20 μ m thick epitaxial β -Ga 2 O 3 drift layers and a double layer of NiO to optimize breakdown and contact resistance was measured with an inductive load test circuit. The Baliga figure-of-merit of the devices was 261 MW.cm −2 , with differential on-state resistance of 11.86 mΩ.cm 2 . The recovery characteristics for these rectifiers switching from forward current of 1 A to reverse off-state voltage of −550 V showed a measurement-parasitic-limited recovery time (t rr ) of 101 ns, with a peak current value of 1.4 A for switching from 640 V. The reverse recovery time was limited by extrinsic parasitic and thus does not represent the intrinsic device characteristics. There was no significant dependence of t rr on switching voltage or forward current.  more » « less
Award ID(s):
1856662
PAR ID:
10362787
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
ECS Journal of Solid State Science and Technology
Volume:
11
Issue:
10
ISSN:
2162-8769
Page Range / eLocation ID:
105003
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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