Abstract We find the scaling limits of a general class of boundary-to-boundary connection probabilities and multiple interfaces in the critical planar FK-Ising model, thus verifying predictions from the physics literature. We also discuss conjectural formulas using Coulomb gas integrals for the corresponding quantities in general critical planar random-cluster models with cluster-weight$${q \in [1,4)}$$ . Thus far, proofs for convergence, including ours, rely on discrete complex analysis techniques and are beyond reach for other values ofqthan the FK-Ising model ($$q=2$$ ). Given the convergence of interfaces, the conjectural formulas for other values ofqcould be verified similarly with relatively minor technical work. The limit interfaces are variants of$$\text {SLE}_\kappa $$ curves (with$$\kappa = 16/3$$ for$$q=2$$ ). Their partition functions, that give the connection probabilities, also satisfy properties predicted for correlation functions in conformal field theory (CFT), expected to describe scaling limits of critical random-cluster models. We verify these properties for all$$q \in [1,4)$$ , thus providing further evidence of the expected CFT description of these models.
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Nontrivial nanostructure, stress relaxation mechanisms, and crystallography for pressure-induced Si-I → Si-II phase transformation
Abstract Crystallographic theory based on energy minimization suggests austenite-twinned martensite interfaces with specific orientation, which are confirmed experimentally for various materials. Pressure-induced phase transformation (PT) from semiconducting Si-I to metallic Si-II, due to very large and anisotropic transformation strain, may challenge this theory. Here, unexpected nanostructure evolution during Si-I → Si-II PT is revealed by combining molecular dynamics (MD), crystallographic theory, generalized for strained crystals, and in situ real-time Laue X-ray diffraction (XRD). Twinned Si-II, consisting of two martensitic variants, and unexpected nanobands, consisting of alternating strongly deformed and rotated residual Si-I and third variant of Si-II, form$$\{111\}$$ interface with Si-I and produce almost self-accommodated nanostructure despite the large transformation volumetric strain of$$-0.237$$ . The interfacial bands arrest the$$\{111\}$$ interfaces, leading to repeating nucleation-growth-arrest process and to growth by propagating$$\{110\}$$ interface, which (as well as$$\{111\}$$ interface) do not appear in traditional crystallographic theory.
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- PAR ID:
- 10363286
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 13
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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