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1. Spectroscopic study of the 4 f ⁷ 6 s ^{2 8} S 7/2∘−4 f ⁷ ( ⁸ S ^∘ )6 s 6 p ( ¹ P ^∘ ) ⁸ P _9/2 transition in neutral europium-151 and europium-153: absolute frequency and hyperfine structure

   https://doi.org/10.1364/JOSAB.467968  

   Herd, M_T; Maruko, C.; Herzog, M_M; Brand, A.; Cannon, G.; Duah, B.; Hollin, N.; Karani, T.; Wallace, A.; Whitmore, M.; et al (September 2022, Journal of the Optical Society of America B)

   We report on spectroscopic measurements on the $4f^{7}6s^2{}^8{S}_{7/2}^{\circ <\#comment/>}\to <\#comment/>4f^7{(}^8{S}^{\circ <\#comment/>}\left)6s6p{(}^1{P}^{\circ <\#comment/>}\right){}^8{P}_{9/2}$transition in neutral europium-151 and europium-153 at 459.4 nm. The center of gravity frequencies for the 151 and 153 isotopes, reported for the first time in this paper, to our knowledge, were found to be 652,389,757.16(34) MHz and 652,386,593.2(5) MHz, respectively. The hyperfine coefficients for the $6s6p{(}^1{P}^{\circ <\#comment/>}){}^8{P}_{9/2}$state were found to be $\mathrm{A}\left(151\right)=-<\#comment/>228.84\left(2\right)\mathrm{M}\mathrm{H}\mathrm{z}$, $\mathrm{B}\left(151\right)=226.9\left(5\right)\mathrm{M}\mathrm{H}\mathrm{z}$and $\mathrm{A}\left(153\right)=-<\#comment/>101.87\left(6\right)\mathrm{M}\mathrm{H}\mathrm{z}$, $\mathrm{B}\left(153\right)=575.4\left(1.5\right)\mathrm{M}\mathrm{H}\mathrm{z}$, which all agree with previously published results except for A(153), which shows a small discrepancy. The isotope shift is found to be 3163.8(6) MHz, which also has a discrepancy with previously published results. 

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2. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei_Ei; Fleischman, Zackery_D; McKay, Jason; Hommerich, Uwe; Kabir, Al_Amin; Riggins, Jazmine; Trivedi, Sudhir; Dubinskii, Mark (September 2022, Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of ${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at $\sim <\#comment/>800\mathrm{n}\mathrm{m}$and $\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at $\sim <\#comment/>1.55$, $\sim <\#comment/>2.75$, $\sim <\#comment/>3.5$, and $\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of $\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of $\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the ${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be $\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and $\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed. 

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3. Demonstration of the DC-Kerr effect in silicon-rich nitride

   https://doi.org/10.1364/OL.432359  

   Friedman, Alex; Nejadriahi, Hani; Sharma, Rajat; Fainman, Yeshaiahu (August 2021, Optics Letters)

   We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, ${\mathrm{\chi <\#comment/>}}^{\left(3\right)}$, as high as $(6\pm <\#comment/>0.58)\times <\#comment/>{10}^{-<\#comment/>19}{\mathrm{m}}^2/{\mathrm{V}}^2$. We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a ${\mathrm{\chi <\#comment/>}}^{\left(3\right)}$larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows. 

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4. Single-shot ultrafast visualization and measurement of laser–matter interactions in flexible glass using frequency domain holography

   https://doi.org/10.1364/OL.382645  

   Dempsey, Dennis; Nagar, Garima_C; Renskers, Christopher_K; Grynko, Rostislav_I; Sutherland, James_S; Shim, Bonggu (February 2020, Optics Letters)

   We perform single-shot frequency domain holography to measure the ultrafast spatio-temporal phase change induced by the optical Kerr effect and plasma in flexible Corning Willow Glass during femtosecond laser–matter interactions. We measure the nonlinear index of refraction ( $n_2$) to be $(3.6\pm <\#comment/>0.1)\times <\#comment/>{10}^{-<\#comment/>16}{\mathrm{c}\mathrm{m}}^2/\mathrm{W}$and visualize the plasma formation and recombination on femtosecond time scales in a single shot. To compare with the experiment, we carry out numerical simulations by solving the nonlinear envelope equation. 

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5. Ultralow-threshold thin-film lithium niobate optical parametric oscillator

   https://doi.org/10.1364/OPTICA.418984  

   Lu, Juanjuan; Al_Sayem, Ayed; Gong, Zheng; Surya, Joshua_B; Zou, Chang-Ling; Tang, Hong_X (April 2021, Optica)

   Materials with strong second-order ( ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$) optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$materials remains challenging and limits the threshold power of on-chip ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$OPO. Here we report an on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase-matched, high-quality microring resonator, whose threshold power ( $\sim <\#comment/>30\text{µ<\#comment/>}\mathrm{W}$) is 400 times lower than that in previous ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained from pump to signal and idler fields at a pump power of 93 µW. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase-matching, and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides a potential platform for realizing photonic neural networks. 

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