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Title: Demonstration of the DC-Kerr effect in silicon-rich nitride

We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility,χ<#comment/>(3), as high as(6±<#comment/>0.58)×<#comment/>10−<#comment/>19m2/V2. We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate aχ<#comment/>(3)larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.

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Award ID(s):
2023730 1901844 1807890 2025752
Publication Date:
Journal Name:
Optics Letters
Page Range or eLocation-ID:
Article No. 4236
0146-9592; OPLEDP
Optical Society of America
Sponsoring Org:
National Science Foundation
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