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1. Electro-optic interface for ultrasensitive intracavity electric field measurements at microwave and terahertz frequencies

   https://doi.org/10.1364/OPTICA.384160  

   Benea-Chelmus, Ileana-Cristina ; Salamin, Yannick ; Settembrini, Francesca Fabiana ; Fedoryshyn, Yuriy ; Heni, Wolfgang ; Elder, Delwin L. ; Dalton, Larry R. ; Leuthold, Juerg ; Faist, Jérôme ( May 2020 , Optica)

   Electro-optic quantum coherent interfaces map the amplitude and phase of a quantum signal directly to the phase or intensity of a probe beam. At terahertz frequencies, a fundamental challenge is not only to sense such weak signals (due to a weak coupling with a probe in the near-infrared) but also to resolve them in the time domain. Cavity confinement of both light fields can increase the interaction and achieve strong coupling. Using this approach, current realizations are limited to low microwave frequencies. Alternatively, in bulk crystals, electro-optic sampling was shown to reach quantum-level sensitivity of terahertz waves. Yet, the coupling strength was extremely weak. Here, we propose an on-chip architecture that concomitantly provides subcycle temporal resolution and an extreme sensitivity to sense terahertz intracavity fields below 20 V/m. We use guided femtosecond pulses in the near-infrared and a confinement of the terahertz wave to a volume of$V_{\mathrm{T}\mathrm{H}\mathrm{z}}\sim <\#comment/>{10}^{-<\#comment/>9}({\mathrm{\lambda <\#comment/>}}_{\mathrm{T}\mathrm{H}\mathrm{z}}/2{)}^3$in combination with ultraperformant organic molecules ($r_{33}=170\mathrm{p}\mathrm{m}/\mathrm{V}$) and accomplish a record-high single-photon electro-optic coupling rate ofmathvariant='normal'>Hz, 10,000 times higher than in recent reports of sensing vacuum field fluctuations in bulk media. Via homodyne detection implemented directly on chip, the interaction results into an intensity modulation of the femtosecond pulses. The single-photon cooperativity is$C_0=1.6\times <\#comment/>{10}^{-<\#comment/>8}$, and the multiphoton cooperativity is$C=0.002$at room temperature. We show$><\#comment/>70\mathrm{d}\mathrm{B}$dynamic range in intensity at 500 ms integration under irradiation with a weak coherent terahertz field. Similar devices could be employed in future measurements of quantum states in the terahertz at the standard quantum limit, or for entanglement of subsystems on subcycle temporal scales, such as terahertz and near-infrared quantum bits.

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2. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei Ei ; Fleischman, Zackery D. ; McKay, Jason ; Hommerich, Uwe ; Kabir, Al Amin ; Riggins, Jazmine ; Trivedi, Sudhir ; Dubinskii, Mark ( September 2022 , Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at$\sim <\#comment/>800\mathrm{n}\mathrm{m}$and$\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at$\sim <\#comment/>1.55$,$\sim <\#comment/>2.75$,$\sim <\#comment/>3.5$, and$\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of$\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of$\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulatedmore »emission cross sections for the${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be$\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and$\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed.

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3. Ultralow-threshold thin-film lithium niobate optical parametric oscillator

   https://doi.org/10.1364/OPTICA.418984  

   Lu, Juanjuan ; Al Sayem, Ayed ; Gong, Zheng ; Surya, Joshua B. ; Zou, Chang-Ling ; Tang, Hong X. ( April 2021 , Optica)

   Materials with strong second-order (${\mathrm{\chi <\#comment/>}}^{(2)}$) optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss${\mathrm{\chi <\#comment/>}}^{(2)}$materials remains challenging and limits the threshold power of on-chip${\mathrm{\chi <\#comment/>}}^{(2)}$OPO. Here we report an on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase-matched, high-quality microring resonator, whose threshold power ($\sim <\#comment/>30\text{µ<\#comment/>}\mathrm{W}$) is 400 times lower than that in previous${\mathrm{\chi <\#comment/>}}^{(2)}$integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained from pump to signal and idler fields at a pump power of 93 µW. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase-matching, and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides a potential platform for realizing photonic neural networks.
4. Phase-factor spectra of turbulent phase screens

   https://doi.org/10.1364/JOSAA.429928  

   Muschinski, Andreas ( August 2021 , Journal of the Optical Society of America A)

   The optical phase$\mathrm{\varphi <\#comment/>}$is a key quantity in the physics of light propagating through a turbulent medium. In certain respects, however, the statistics of the phasefactor,$\mathrm{\psi <\#comment/>}=\exp <\#comment/>(i\mathrm{\varphi <\#comment/>})$, are more relevant than the statistics of the phase itself. Here, we present a theoretical analysis of the 2D phase-factor spectrum$F_{\mathrm{\psi <\#comment/>}}(\mathit{\kappa <\#comment/>})$of a random phase screen. We apply the theory to four types of phase screens, each characterized by a power-law phase structure function,$D_{\mathrm{\varphi <\#comment/>}}(r)=(r/r_c{)}^{\mathrm{\gamma <\#comment/>}}$(where$r_c$is the phase coherence length defined by$D_{\mathrm{\varphi <\#comment/>}}(r_c)=1{\mathrm{r}\mathrm{a}\mathrm{d}}^2$), and a probability density function$p_{\mathrm{\alpha <\#comment/>}}(\mathrm{\alpha <\#comment/>})$of the phase increments for a given spatial lag. We analyze phase screens with turbulent ($\mathrm{\gamma <\#comment/>}=5/3$) and quadratic ($\mathrm{\gamma <\#comment/>}=2$) phase structure functions and with normally distributed (i.e., Gaussian) versus Laplacian phase increments. We find that there is a pronounced bump in each of the four phase-factor spectra$F_{\mathrm{\psi <\#comment/>}}(\mathrm{\kappa <\#comment/>})$. The precise location and shape of the bump are different for the four phase-screen types, but in each case it occurs at$\mathrm{\kappa <\#comment/>}\sim <\#comment/>1/r_c$. The bump is unrelated to the well-knownmore »“Hill bump” and is not caused by diffraction effects. It is solely a characteristic of the refractive-index statistics represented by the respective phase screen. We show that the second-order$\mathrm{\psi <\#comment/>}$statistics (covariance function, structure function, and spectrum) characterize a random phase screen more completely than the second-order$\mathrm{\varphi <\#comment/>}$counterparts.

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5. Demonstration of the DC-Kerr effect in silicon-rich nitride

   https://doi.org/10.1364/OL.432359  

   Friedman, Alex ; Nejadriahi, Hani ; Sharma, Rajat ; Fainman, Yeshaiahu ( August 2021 , Optics Letters)

   We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility,${\mathrm{\chi <\#comment/>}}^{(3)}$, as high as$(6\pm <\#comment/>0.58)\times <\#comment/>{10}^{-<\#comment/>19}{\mathrm{m}}^2/{\mathrm{V}}^2$. We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a${\mathrm{\chi <\#comment/>}}^{(3)}$larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.