More Like this

1. How many qubits are needed for quantum computational supremacy?

   https://doi.org/10.22331/q-2020-05-11-264  

   Dalzell, Alexander M. ; Harrow, Aram W. ; Koh, Dax Enshan ; La Placa, Rolando L. ( May 2020 , Quantum)

   Quantum computational supremacy arguments, which describe a way for a quantum computer to perform a task that cannot also be done by a classical computer, typically require some sort of computational assumption related to the limitations of classical computation. One common assumption is that the polynomial hierarchy ( P H ) does not collapse, a stronger version of the statement that P ≠ N P , which leads to the conclusion that any classical simulation of certain families of quantum circuits requires time scaling worse than any polynomial in the size of the circuits. However, the asymptotic nature of this conclusion prevents us from calculating exactly how many qubits these quantum circuits must have for their classical simulation to be intractable on modern classical supercomputers. We refine these quantum computational supremacy arguments and perform such a calculation by imposing fine-grained versions of the non-collapse conjecture. Our first two conjectures poly3-NSETH( a ) and per-int-NSETH( b ) take specific classical counting problems related to the number of zeros of a degree-3 polynomial in n variables over F 2 or the permanent of an n × n integer-valued matrix, and assert that any non-deterministic algorithm that solves them requires 2 c nmore »time steps, where c ∈ { a , b } . A third conjecture poly3-ave-SBSETH( a ′ ) asserts a similar statement about average-case algorithms living in the exponential-time version of the complexity class S B P . We analyze evidence for these conjectures and argue that they are plausible when a = 1 / 2 , b = 0.999 and a ′ = 1 / 2 .Imposing poly3-NSETH(1/2) and per-int-NSETH(0.999), and assuming that the runtime of a hypothetical quantum circuit simulation algorithm would scale linearly with the number of gates/constraints/optical elements, we conclude that Instantaneous Quantum Polynomial-Time (IQP) circuits with 208 qubits and 500 gates, Quantum Approximate Optimization Algorithm (QAOA) circuits with 420 qubits and 500 constraints and boson sampling circuits (i.e. linear optical networks) with 98 photons and 500 optical elements are large enough for the task of producing samples from their output distributions up to constant multiplicative error to be intractable on current technology. Imposing poly3-ave-SBSETH(1/2), we additionally rule out simulations with constant additive error for IQP and QAOA circuits of the same size. Without the assumption of linearly increasing simulation time, we can make analogous statements for circuits with slightly fewer qubits but requiring 10 4 to 10 7 gates.« less
2. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K.more »The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
3. Quantifying the magic of quantum channels

   https://doi.org/10.1088/1367-2630/ab451d  

   Wang, Xin ; Wilde, Mark M. ; Su, Yuan ( October 2019 , New Journal of Physics)

   To achieve universal quantum computation via general fault-tolerant schemes, stabilizer operations must be supplemented with other non-stabilizer quantum resources. Motivated by this necessity, we develop a resource theory for magic quantum channels to characterize and quantify the quantum ‘magic’ or non-stabilizerness of noisy quantum circuits. For qudit quantum computing with odd dimensiond, it is known that quantum states with non-negative Wigner function can be efficiently simulated classically. First, inspired by this observation, we introduce a resource theory based on completely positive-Wigner-preserving quantum operations as free operations, and we show that they can be efficiently simulated via a classical algorithm. Second, we introduce two efficiently computable magic measures for quantum channels, called the mana and thauma of a quantum channel. As applications, we show that these measures not only provide fundamental limits on the distillable magic of quantum channels, but they also lead to lower bounds for the task of synthesizing non-Clifford gates. Third, we propose a classical algorithm for simulating noisy quantum circuits, whose sample complexity can be quantified by the mana of a quantum channel. We further show that this algorithm can outperform another approach for simulating noisy quantum circuits, based on channel robustness. Finally, we explore themore »threshold of non-stabilizerness for basic quantum circuits under depolarizing noise.

   « less
4. A quantum algorithm for evolving open quantum dynamics on quantum computing devices

   https://doi.org/10.1038/s41598-020-60321-x  

   Hu, Zixuan ; Xia, Rongxin ; Kais, Sabre ( February 2020 , Scientific Reports)

   Designing quantum algorithms for simulating quantum systems has seen enormous progress, yet few studies have been done to develop quantum algorithms for open quantum dynamics despite its importance in modeling the system-environment interaction found in most realistic physical models. In this work we propose and demonstrate a general quantum algorithm to evolve open quantum dynamics on quantum computing devices. The Kraus operators governing the time evolution can be converted into unitary matrices with minimal dilation guaranteed by the Sz.-Nagy theorem. This allows the evolution of the initial state through unitary quantum gates, while using significantly less resource than required by the conventional Stinespring dilation. We demonstrate the algorithm on an amplitude damping channel using the IBM Qiskit quantum simulator and the IBM Q 5 Tenerife quantum device. The proposed algorithm does not require particular models of dynamics or decomposition of the quantum channel, and thus can be easily generalized to other open quantum dynamical models.
5. Constrained quantum optimization for extractive summarization on a trapped-ion quantum computer

   https://doi.org/10.1038/s41598-022-20853-w  

   Niroula, Pradeep ; Shaydulin, Ruslan ; Yalovetzky, Romina ; Minssen, Pierre ; Herman, Dylan ; Hu, Shaohan ; Pistoia, Marco ( October 2022 , Scientific Reports)

   Realizing the potential of near-term quantum computers to solve industry-relevant constrained-optimization problems is a promising path to quantum advantage. In this work, we consider the extractive summarization constrained-optimization problem and demonstrate the largest-to-date execution of a quantum optimization algorithm that natively preserves constraints on quantum hardware. We report results with the Quantum Alternating Operator Ansatz algorithm with a Hamming-weight-preserving XY mixer (XY-QAOA) on trapped-ion quantum computer. We successfully execute XY-QAOA circuits that restrict the quantum evolution to the in-constraint subspace, using up to 20 qubits and a two-qubit gate depth of up to 159. We demonstrate the necessity of directly encoding the constraints into the quantum circuit by showing the trade-off between the in-constraint probability and the quality of the solution that is implicit if unconstrained quantum optimization methods are used. We show that this trade-off makes choosing good parameters difficult in general. We compare XY-QAOA to the Layer Variational Quantum Eigensolver algorithm, which has a highly expressive constant-depth circuit, and the Quantum Approximate Optimization Algorithm. We discuss the respective trade-offs of the algorithms and implications for their execution on near-term quantum hardware.