skip to main content

This content will become publicly available on December 1, 2023

Title: Slow light in a 2D semiconductor plasmonic structure
Abstract Spectrally narrow optical resonances can be used to generate slow light, i.e., a large reduction in the group velocity. In a previous work, we developed hybrid 2D semiconductor plasmonic structures, which consist of propagating optical frequency surface-plasmon polaritons interacting with excitons in a semiconductor monolayer. Here, we use coupled exciton-surface plasmon polaritons (E-SPPs) in monolayer WSe 2 to demonstrate slow light with a 1300 fold decrease of the SPP group velocity. Specifically, we use a high resolution two-color laser technique where the nonlinear E-SPP response gives rise to ultra-narrow coherent population oscillation (CPO) resonances, resulting in a group velocity on order of 10 5  m/s. Our work paves the way toward on-chip actively switched delay lines and optical buffers that utilize 2D semiconductors as active elements.
Authors:
; ; ; ; ; ;
Award ID(s):
1839570
Publication Date:
NSF-PAR ID:
10389389
Journal Name:
Nature Communications
Volume:
13
Issue:
1
ISSN:
2041-1723
Sponsoring Org:
National Science Foundation
More Like this
  1. Titanium nitride (TiN) has been identified as a promising refractory material for high temperature plasmonic applications such as surface plasmon polaritons (SPPs) waveguides, lasers and light sources, and near field optics. Such SPPs are sensitive not only to the highly metallic nature of the TiN, but also to its low loss. We have formed highly metallic, low-loss TiN thin films on MgO substrates to create SPPs with resonances between 775-825 nm. Scanning near-field optical microscopy (SNOM) allowed imaging of the SPP fringes, the accurate determination of the effective wavelength of the SPP modes, and propagation lengths greater than 10 microns. Further, we show the engineering of the band structure of the plasmonic modes in TiN in the mid-IR regime and experimentally demonstrate, for the first time, the ability of TiN to support Spoof Surface Plasmon Polaritons in the mid-IR (6 microns wavelength).

  2. We present a transient response study of a semiconductor based plasmonic switch. The proposed device operates through active control and modulation of localized electron density waves, i.e., surface plasmon polaritons (SPPs) at degenerately doped In0.53Ga0.47As based PN++junctions. A set of devices is designed and fabricated, and its optical and electronic behaviors are studied both experimentally and theoretically. Optical characterization shows far-field reflectivity modulation, a result of electrical tuning of the SPPs at the PN++junctions for mid-IR wavelengths, with significant 3 dB bandwidths. Numerical studies using a self-consistent electro-optic multi-physics model are performed to uncover the temporal response of the devices’ electromagnetic and kinetic mechanisms facilitating the SPP switching at the PN++junctions. Numerical simulations show strong synergy with the experimental results, validating the claim of potential optoelectronic switching with a 3 dB bandwidth as high as 2 GHz. Thus, this study confirms that the presented SPP diode architecture can be implemented for high-speed control of SPPs through electrical means, providing a pathway toward fast all-semiconductor plasmonic devices.

  3. Abstract

    We selectively excite and study two new types of phonon-polariton guided modes that are found in hexagonal boron nitride thin flakes on a gold substrate. Such modes show substantially improved confinement and a group velocity that is hundreds of times slower than the speed of light, thereby providing a new way to create slow light in the mid-infrared range with a simple structure that does not require nano-patterning. One mode is the fundamental mode in the first Restrahlen band of hexagonal boron nitride thin crystals on a gold substrate; the other mode is equivalent to the second mode of the second Restrahlen band of hexagonal boron nitride flakes that are suspended in vacuum.

    The new modes also couple efficiently with incident light at the hexagonal boron nitride edges, as we demonstrate experimentally using photo-induced force microscopy and scanning near-field optical microscopy. The high confinement of these modes allows for Purcell factors that are on the order of tens of thousands directly above boron nitride and a wide band, with new perspectives for enhanced light-matter interaction. Our findings demonstrate a new approach to engineering the dispersion of polaritons in 2D materials to improve confinement and light-matter interaction, thereby paving themore »way for new applications in mid-infrared nano-optics.

    « less
  4. Probe is the core component of an optical scanning probe microscope such as scattering-type scanning near-field optical microscopy (s-SNOM). Its ability of concentrating and localizing light determines the detection sensitivity of nanoscale spectroscopy. In this paper, a novel plasmonic probe made of a gradient permittivity material (GPM) is proposed and its nanofocusing performance is studied theoretically and numerically. Compared with conventional plasmonic probes, this probe has at least two outstanding advantages: First, it doesn't need extra structures for surface plasmon polaritons (SPPs) excitation or localized surface plasmon resonance (LSPR), simplifying the probe system; Second, the inherent nanofocusing effects of the conical probe structure can be further reinforced dramatically by designing the distribution of the probe permittivity. As a result, the strong near-field enhancement and localization at the tip apex improve both spectral sensitivity and spatial resolution of a s-SNOM. We also numerically demonstrate that a GPM probe as well as its enhanced nanofocusing effects can be realized by conventional semiconductor materials with designed doping distributions. The proposed novel plasmonic probe promises to facilitate subsequent nanoscale spectroscopy applications.
  5. Plasmon coupling and hybridization in 2D materials plays a significant role for controlling light–matter interaction at the nanoscale. We present a near-field radiation heat transfer (NFRHT) between vertically separated graphene and black phosphorene sheets at different temperatures in nanoscale separations. Radiation exchange from the theory of fluctuation electrodynamics is modulated by the carrier density of graphene and phosphorene. Direct comparison of NFRHT black phosphorene–graphene to symmetric graphene–graphene radiation exchange can be as much as 4 times higher for the selected doping range in both armchair (AC) and zigzag (ZZ) orientations of BP. The strong NFRHT enhancement of the specific optical properties of the heterogenous 2D material is due to the strong coupling of propagating surface plasmon polaritons as demonstrated by the distribution of the heat transfer coefficient. We also demonstrate that the magnitude of the near-field radiation enhancement is found to acutely depend on the vacuum gap of the graphene and BP pair. Interestingly, for separation distances below 200 nm, the total near-field heat transfer between black phosphorene and graphene exceeds that between graphene and graphene by 5 times. The radiation enhancement can be further tuned based on the orientation, AC, and ZZ of black phosphorene. These results prominently enablemore »dynamic control of the total NFRHT relying on tunable anisotropic characteristics of BP irrespective of graphene's optical conductivity. Furthermore, the heterogeneous pairs of 2D materials potentially provide alternative platforms to achieve beyond super-Planckian radiation.« less