We report thermal and mechanical responses accompanying electrical characteristics of depletion mode GaN high electron mobility transistors exposed to gamma radiation up to 107rads. Changes in the lattice strain and temperature were simultaneously characterized by changes in the phonon frequency of E2(high) and A1(LO) from the on-state and unpowered/pinched off reference states. Lower doses of radiation improved electrical properties; however, degradation initiated at about 106rads. We observed about 16% decrease in the saturation current and 6% decrease in the transconductance at the highest dose. However, a leakage current increase by three orders of magnitude was the most notable radiation effect. We observed temperature increase by 40% and mechanical stress increase by a factor of three at a dose of 107rads compared to the pristine devices. Spatial mapping of mechanical stress along the channel identifies the gate region as a mechanically affected area, whereas the thermal degradation was mostly uniform. Transmission electron microscopy showed contrast changes reflecting a high vacancy concentration in the gate region. These findings suggest that localized stress (mechanical hotspots) may increase vulnerability to radiation damage by accommodating higher concentration of defects that promote the leakage current.
Heuristic Detection of the Most Vulnerable Regions in Electronic Devices for Radiation Survivability
As electronic systems become larger and more complex, detection of the most vulnerable regions (MVR) to radiation exposure becomes more difficult and time consuming. We present a heuristic approach where the mechanical and thermal aspects of devices are exploited to quickly identify MVRs. Our approach involves the topological mapping of two device conditions. The first condition identifies regions with the highest mechanical strain or density of defects and interfaces via thermal wave probing and phase analysis. The second condition identifies regions with high electrical field. It is hypothesized that the region with the highest thermal wave penetration resistance and electrical field will exhibit the highest sensitivity to incoming radiation for single events and potentially, total ionizing dose. Our approach implements a simplistic design that improves analysis time by ∼2–3 orders of magnitude over current radiation sensitivity mapping methods. The design is demonstrated on the well-studied operational amplifier LM124, which shows agreement with the literature in identifying sensitive transistors–QR1, Q9, and Q18–with relatively high phase percentile values (>70%) and ΔT percentiles (>50%), satisfying conditions for elevated radiation susceptibility. This is followed by experimental results on a static random access memory (HM-6504) and a Xilinx Artix-7 35 T system on a chip.
more »
« less
- Award ID(s):
- 2015795
- NSF-PAR ID:
- 10399308
- Date Published:
- Journal Name:
- ECS Journal of Solid State Science and Technology
- Volume:
- 11
- Issue:
- 8
- ISSN:
- 2162-8769
- Page Range / eLocation ID:
- 085008
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
-
The demand for high power and high-frequency radio frequency (RF) power amplifiers makes AlGaN/GaN high electron mobility transistors (HEMTs) an attractive option due to their large critical field, high saturation velocity, and reduced device footprint as compared to Si-based counterparts. However, due to the high operating power densities, intense device self-heating occurs, which degrades the electrical performance and compromises the device’s reliability. The self-heating behavior of AlGaN/GaN HEMTs is known to be not solely a function of the dissipated power but is highly bias-dependent. As the operation of RF power amplifiers involves alteration of the device operation from fully-open to pinched-off channel conditions, it is critical to experimentally map the full channel temperature profile as a function of bias conditions. However, such measurement is difficult using optical thermography techniques due to the lack of optical access underneath the gate electrode, where the peak temperature is expected to occur.more » « less
To address this challenge, an AlGaN/GaN HEMT employing a transparent gate made of indium tin oxide (ITO) was fabricated, which enables full channel temperature mapping using Raman spectroscopy. It was found that the maximum channel temperature rise under a partially pinched-off condition is more than ∼93% higher than that for an open channel condition, although both conditions would lead to an identical power dissipation level. The channel peak temperature probed in an ITO-gated device (underneath the gate) is ∼33% higher than the highest channel temperature that can be measured for a standard metal-gated AlGaN/GaN HEMT (i.e., next to the metal gate structure) operating under an identical bias condition. This indicates that one may significantly underestimate the device’s thermal resistance when solely relying on performing thermal characterization on the optically accessible region of a standard AlGaN/GaN HEMT. The outcomes of this study are important in terms of conducting a more accurate lifetime prediction of the device lifetime and designing thermal management solutions.
-
Embedding properties of network realizations of dissipative reduced order models Jörn Zimmerling, Mikhail Zaslavsky,Rob Remis, Shasri Moskow, Alexander Mamonov, Murthy Guddati, Vladimir Druskin, and Liliana Borcea Mathematical Sciences Department, Worcester Polytechnic Institute https://www.wpi.edu/people/vdruskin Abstract Realizations of reduced order models of passive SISO or MIMO LTI problems can be transformed to tridiagonal and block-tridiagonal forms, respectively, via dierent modi cations of the Lanczos algorithm. Generally, such realizations can be interpreted as ladder resistor-capacitor-inductor (RCL) networks. They gave rise to network syntheses in the rst half of the 20th century that was at the base of modern electronics design and consecutively to MOR that tremendously impacted many areas of engineering (electrical, mechanical, aerospace, etc.) by enabling e cient compression of the underlining dynamical systems. In his seminal 1950s works Krein realized that in addition to their compressing properties, network realizations can be used to embed the data back into the state space of the underlying continuum problems. In more recent works of the authors Krein's ideas gave rise to so-called nite-dierence Gaussian quadrature rules (FDGQR), allowing to approximately map the ROM state-space representation to its full order continuum counterpart on a judicially chosen grid. Thus, the state variables can be accessed directly from the transfer function without solving the full problem and even explicit knowledge of the PDE coe cients in the interior, i.e., the FDGQR directly learns" the problem from its transfer function. This embedding property found applications in PDE solvers, inverse problems and unsupervised machine learning. Here we show a generalization of this approach to dissipative PDE problems, e.g., electromagnetic and acoustic wave propagation in lossy dispersive media. Potential applications include solution of inverse scattering problems in dispersive media, such as seismic exploration, radars and sonars. To x the idea, we consider a passive irreducible SISO ROM fn(s) = Xn j=1 yi s + σj , (62) assuming that all complex terms in (62) come in conjugate pairs. We will seek ladder realization of (62) as rjuj + vj − vj−1 = −shˆjuj , uj+1 − uj + ˆrj vj = −shj vj , (63) for j = 0, . . . , n with boundary conditions un+1 = 0, v1 = −1, and 4n real parameters hi, hˆi, ri and rˆi, i = 1, . . . , n, that can be considered, respectively, as the equivalent discrete inductances, capacitors and also primary and dual conductors. Alternatively, they can be viewed as respectively masses, spring stiness, primary and dual dampers of a mechanical string. Reordering variables would bring (63) into tridiagonal form, so from the spectral measure given by (62 ) the coe cients of (63) can be obtained via a non-symmetric Lanczos algorithm written in J-symmetric form and fn(s) can be equivalently computed as fn(s) = u1. The cases considered in the original FDGQR correspond to either (i) real y, θ or (ii) real y and imaginary θ. Both cases are covered by the Stieltjes theorem, that yields in case (i) real positive h, hˆ and trivial r, rˆ, and in case (ii) real positive h,r and trivial hˆ,rˆ. This result allowed us a simple interpretation of (62) as the staggered nite-dierence approximation of the underlying PDE problem [2]. For PDEs in more than one variables (including topologically rich data-manifolds), a nite-dierence interpretation is obtained via a MIMO extensions in block form, e.g., [4, 3]. The main di culty of extending this approach to general passive problems is that the Stieltjes theory is no longer applicable. Moreover, the tridiagonal realization of a passive ROM transfer function (62) via the ladder network (63) cannot always be obtained in port-Hamiltonian form, i.e., the equivalent primary and dual conductors may change sign [1]. 100 Embedding of the Stieltjes problems, e.g., the case (i) was done by mapping h and hˆ into values of acoustic (or electromagnetic) impedance at grid cells, that required a special coordinate stretching (known as travel time coordinate transform) for continuous problems. Likewise, to circumvent possible non-positivity of conductors for the non-Stieltjes case, we introduce an additional complex s-dependent coordinate stretching, vanishing as s → ∞ [1]. This stretching applied in the discrete setting induces a diagonal factorization, removes oscillating coe cients, and leads to an accurate embedding for moderate variations of the coe cients of the continuum problems, i.e., it maps discrete coe cients onto the values of their continuum counterparts. Not only does this embedding yields an approximate linear algebraic algorithm for the solution of the inverse problems for dissipative PDEs, it also leads to new insight into the properties of their ROM realizations. We will also discuss another approach to embedding, based on Krein-Nudelman theory [5], that results in special data-driven adaptive grids. References [1] Borcea, Liliana and Druskin, Vladimir and Zimmerling, Jörn, A reduced order model approach to inverse scattering in lossy layered media, Journal of Scienti c Computing, V. 89, N1, pp. 136,2021 [2] Druskin, Vladimir and Knizhnerman, Leonid, Gaussian spectral rules for the three-point second dierences: I. A two-point positive de nite problem in a semi-in nite domain, SIAM Journal on Numerical Analysis, V. 37, N 2, pp.403422, 1999 [3] Druskin, Vladimir and Mamonov, Alexander V and Zaslavsky, Mikhail, Distance preserving model order reduction of graph-Laplacians and cluster analysis, Druskin, Vladimir and Mamonov, Alexander V and Zaslavsky, Mikhail, Journal of Scienti c Computing, V. 90, N 1, pp 130, 2022 [4] Druskin, Vladimir and Moskow, Shari and Zaslavsky, Mikhail LippmannSchwingerLanczos algorithm for inverse scattering problems, Inverse Problems, V. 37, N. 7, 2021, [5] Mark Adolfovich Nudelman The Krein String and Characteristic Functions of Maximal Dissipative Operators, Journal of Mathematical Sciences, 2004, V 124, pp 49184934 Go back to Plenary Speakers Go back to Speakers Go backmore » « less
-
more » « less
ABSTRACT Low-mass X-ray binaries have long been theorized as potential sources of continuous gravitational-wave radiation, yet there is no observational evidence from recent LIGO/Virgo observing runs. Even for the theoretically ‘loudest’ source, Sco X-1, the upper limit on gravitational-wave strain has been pushed ever lower. Such searches require precise measurements of the source properties for sufficient sensitivity and computational feasibility. Collating over 20 yr of high-quality spectroscopic observations of the system, we present a precise and comprehensive ephemeris for Sco X-1 through radial velocity measurements, performing a full homogeneous re-analysis of all relevant data sets and correcting previous analyses. Our Bayesian approach accounts for observational systematics and maximizes not only precision, but also the fidelity of uncertainty estimates – crucial for informing principled continuous-wave searches. Our extensive data set and analysis also enables us to construct the highest signal-to-noise ratio, highest resolution phase-averaged spectrum of a low-mass X-ray binary to date. Doppler tomography reveals intriguing transient structures present in the accretion disc and flow driven by modulation of the accretion rate, necessitating further characterization of the system at high temporal and spectral resolution. Our ephemeris corrects and supersedes previous ephemerides, and provides a factor three reduction in the number of templates in the search space, facilitating precision searches for continuous gravitational-wave emission from Sco X-1 throughout the upcoming LIGO/Virgo/KAGRA O4 observing run and beyond.
-
Purpose AlSi10Mg alloy is commonly used in laser powder bed fusion due to its printability, relatively high thermal conductivity, low density and good mechanical properties. However, the thermal conductivity of as-built materials as a function of processing (energy density, laser power, laser scanning speed, support structure) and build orientation, are not well explored in the literature. This study aims to elucidate the relationship between processing, microstructure, and thermal conductivity. Design/methodology/approach The thermal conductivity of laser powder bed fusion (L-PBF) AlSi10Mg samples are investigated by the flash diffusivity and frequency domain thermoreflectance (FDTR) techniques. Thermal conductivities are linked to the microstructure of L-PBF AlSi10Mg, which changes with processing conditions. The through-plane exceeded the in-plane thermal conductivity for all energy densities. A co-located thermal conductivity map by frequency domain thermoreflectance (FDTR) and crystallographic grain orientation map by electron backscattered diffraction (EBSD) was used to investigate the effect of microstructure on thermal conductivity. Findings The highest through-plane thermal conductivity (136 ± 2 W/m-K) was achieved at 59 J/mm 3 and exceeded the values reported previously. The in-plane thermal conductivity peaked at 117 ± 2 W/m-K at 50 J/mm 3 . The trend of thermal conductivity reducing with energy density at similar porosity was primarily due to the reduced grain size producing more Al-Si interfaces that pose thermal resistance. At these interfaces, thermal energy must convert from electrons in the aluminum to phonons in the silicon. The co-located thermal conductivity and crystallographic grain orientation maps confirmed that larger colonies of columnar grains have higher thermal conductivity compared to smaller columnar grains. Practical implications The thermal properties of AlSi10Mg are crucial to heat transfer applications including additively manufactured heatsinks, cold plates, vapor chambers, heat pipes, enclosures and heat exchangers. Additionally, thermal-based nondestructive testing methods require these properties for applications such as defect detection and simulation of L-PBF processes. Industrial standards for L-PBF processes and components can use the data for thermal applications. Originality/value To the best of the authors’ knowledge, this paper is the first to make coupled thermal conductivity maps that were matched to microstructure for L-PBF AlSi10Mg aluminum alloy. This was achieved by a unique in-house thermal conductivity mapping setup and relating the data to local SEM EBSD maps. This provides the first conclusive proof that larger grain sizes can achieve higher thermal conductivity for this processing method and material system. This study also shows that control of the solidification can result in higher thermal conductivity. It was also the first to find that the build substrate (with or without support) has a large effect on thermal conductivity.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1149/2162-8777/ac861a
