skip to main content

Explore Research Products in the NSF-PAR

Title: High thermal conductivity in wafer-scale cubic silicon carbide crystals
Abstract High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m −1 K −1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.  more » « less
Award ID(s):
2212830
NSF-PAR ID:
10402193
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Nature Communications
Volume:
13
Issue:
1
ISSN:
2041-1723
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; ; ; ; ; ; ; ; ; et al ( , Journal of Electronic Packaging)
    null (Ed.)
    Abstract Gallium nitride (GaN) has emerged as one of the most attractive base materials for next-generation high-power and high-frequency electronic devices. Recent efforts have focused on realizing vertical power device structures such as in situ oxide, GaN interlayer based vertical trench metal–oxide–semiconductor field-effect transistors (OG-FETs). Unfortunately, the higher-power density of GaN electronics inevitably leads to considerable device self-heating which impacts device performance and reliability. Halide vapor-phase epitaxy (HVPE) is currently the most common approach for manufacturing commercial GaN substrates used to build vertical GaN transistors. Vertical device structures consist of GaN layers of diverse doping levels. Hence, it is of crucial importance to measure and understand how the dopant type (Si, Fe, and Mg), doping level, and crystal quality alter the thermal conductivity of HVPE-grown bulk GaN. In this work, a steady-state thermoreflectance (SSTR) technique was used to measure the thermal conductivity of HVPE-grown GaN substrates employing different doping schemes and levels. Structural and electrical characterization methods including X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS), Raman spectroscopy, and Hall-effect measurements were used to determine and compare the GaN crystal quality, dislocation density, doping level, and carrier concentration. Using this comprehensive suite of characterization methods, the interrelation among structural/electrical parameters and the thermal conductivity of bulk GaN substrates was investigated. While doping is evidenced to reduce the GaN thermal conductivity, the highest thermal conductivity (201 W/mK) is observed in a heavily Si-doped (1–5.00 × 1018 cm−3) substrate with the highest crystalline quality. This suggests that phonon-dislocation scattering dominates over phonon-impurity scattering in the tested HVPE-grown bulk GaN substrates. The results provide useful information for designing thermal management solutions for vertical GaN power electronic devices. 
    more » « less
  2. ; ; ; ; ; ; ; ; ; ; et al ( , Frontiers in Mechanical Engineering)
    The Mg 3 Sb 2− x Bi x family has emerged as the potential candidates for thermoelectric applications due to their ultra-low lattice thermal conductivity ( κ L ) at room temperature (RT) and structural complexity. Here, using ab initio calculations of the electron-phonon averaged (EPA) approximation coupled with Boltzmann transport equation (BTE), we have studied electronic, phonon and thermoelectric properties of Mg 3 Sb 2− x Bi x (x = 0, 1, and 2) monolayers. In violation of common mass-trend expectations, increasing Bi element content with heavier Zintl phase compounds yields an abnormal change in κ L in two-dimensional Mg 3 Sb 2− x Bi x crystals at RT (∼0.51, 1.86, and 0.25 W/mK for Mg 3 Sb 2 , Mg 3 SbBi, and Mg 3 Bi 2 ). The κ L trend was detailedly analyzed via the phonon heat capacity, group velocity and lifetime parameters. Based on quantitative electronic band structures, the electronic bonding through the crystal orbital Hamilton population (COHP) and electron local function analysis we reveal the underlying mechanism for the semiconductor-semimetallic transition of Mg 3 Sb 2-− x Bi x compounds, and these electronic transport properties (Seebeck coefficient, electrical conductivity, and electronic thermal conductivity) were calculated. We demonstrate that the highest dimensionless figure of merit ZT of Mg 3 Sb 2− x Bi x compounds with increasing Bi content can reach ∼1.6, 0.2, and 0.6 at 700 K, respectively. Our results can indicate that replacing heavier anion element in Zintl phase Mg 3 Sb 2− x Bi x materials go beyond common expectations (a heavier atom always lead to a lower κ L from Slack’s theory), which provide a novel insight for regulating thermoelectric performance without restricting conventional heavy atomic mass approach. 
    more » « less
  3. ; ; ; ( , Nanoscale)
    null (Ed.)
    Thermal anisotropy/isotropy is one of the fundamental thermal transport properties of materials and plays a critical role in a wide range of practical applications. Manipulation of anisotropic to isotropic thermal transport or vice versa is in increasing demand. However, almost all the existing approaches for tuning anisotropy or isotropy focus on structure engineering or materials processing, which is time and cost consuming and irreversible, while little progress has been made with an intact, robust, and reversible method. Motivated by the inherent relationship between interatomic interaction mediated phonon transport and electronic charges, we comprehensively investigate the effect of external electric field on thermal transport in two-dimensional (2D) borophene by performing first-principles calculations along with the phonon Boltzmann transport equation. Under external electric field, the lattice thermal conductivity of borophene in both in-plane directions first increases significantly to peak values with the maximum augmentation factor of 2.82, and the intrinsic anisotropy (the ratio of thermal conductivity along two in-plane directions) is boosted to the highest value of 2.13. After that, thermal conductivities drop down steeply and anisotropy exhibits oscillating decay. With the electric field increasing to 0.4 V Å −1 , the thermal conductivity is dramatically suppressed to 1/40 of the original value at no electric field. More interestingly, the anisotropy of the thermal conductivity decreases to the minimum value of 1.25, showing almost isotropic thermal transport. Such abnormal anisotropic to isotropic thermal transport transition stems from the large enhancement and suppression of phonon lifetime at moderate and high strength of electric field, respectively, and acts as an amplifying or reducing factor to the thermal conductivity. We further explain the tunability of phonon lifetime of the dominant acoustic mode by an electron localization function. By comparing the electric field-modulated thermal conductivity of borophene with the dielectric constant, it is found that the screened potential resulting from the redistributed charge density leads to phonon renormalization and the modulation of phonon anharmonicity and anisotropy through electric field. Our study paves the way for robust tuning of anisotropy of phonon transport in materials by applying intact, robust, and reversible external electric field without altering their atomic structure and would have a significant impact on emerging applications, such as thermal management of nanoelectronics and thermoelectric energy conversion. 
    more » « less
  4. ; ; ; ; ; ; ; ; ; ( , Advanced Science)
    Abstract

    Nanosized perovskite ferroelectrics are widely employed in several electromechanical, photonics, and thermoelectric applications. Scaling of ferroelectric materials entails a severe reduction in the lattice (phonon) thermal conductivity, particularly at sub‐100 nm length scales. Such thermal conductivity reduction can be accurately predicted using the information of phonon mean free path (MFP) distribution. The current understanding of phonon MFP distribution in perovskite ferroelectrics is still inconclusive despite the critical thermal management implications. Here, high‐quality single‐crystalline barium titanate (BTO) thin films, a representative perovskite ferroelectric material, are grown at several thicknesses. Using experimental thermal conductivity measurements and first‐principles based modeling (including four‐phonon scattering), the phonon MFP distribution is determined in BTO. The simulation results agree with the measured thickness‐dependent thermal conductivity. The results show that the phonons with sub‐100 nm MFP dominate the thermal transport in BTO, and phonons with MFP exceeding 10 nm contribute ≈35% to the total thermal conductivity, in significant contrast to previously published experimental results. The experimentally validated phonon MFP distribution is consistent with the theoretical predictions of other complex crystals with strong anharmonicity. This work paves the way for thermal management in nanostructured and ferroelectric‐domain‐engineered systems for oxide perovskite‐based functional materials.

     
    more » « less
  5. ; ; ; ; ( , Nanoscale Advances)
    Hydrogenated amorphous silicon (a-Si:H) has drawn keen interest as a thin-film semiconductor and superb passivation layer in high-efficiency silicon solar cells due to its low cost, low processing temperature, high compatibility with substrates, and scalable manufacturing. Although the impact of hydrogenation on the structural, optical, and electronic properties of a-Si:H has been extensively studied, the underlying physics of its impact on the thermal properties is still unclear. Here, we synthesize a-Si:H films with well-controlled hydrogen concentrations using plasma-enhanced chemical vapor deposition and systematically study the thermal conductivity of these a-Si:H films using time-domain thermoreflectance. We find that the reduction of thermal conductivity of a-Si:H films is attributed to the suppression of diffuson and propagon contributions as the hydrogen concentration increases. At the maximum hydrogen concentration of 25.4 atomic percentage, the contributions from diffusons and propagons to the thermal conductivity are decreased by 40% (from 1.10 to 0.67 W m −1 K −1 ) and 64% (from 0.61 to 0.22 W m −1 K −1 ), respectively. Such a significant reduction in the thermal conductivity of a-Si:H originates from the hydrogen induced material softening, the decrease in density, and phonon-defect scattering. The results of this work provide fundamental insights into the thermal transport properties of a-Si:H thin films, which is beneficial for the design and optimization of amorphous silicon-based technologies including photovoltaics, large-area electronics, and thermoelectric devices. 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email