skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: Orientation-controlled crystallization of γ-glycine films with enhanced piezoelectricity
Glycine, the simplest amino acid, is considered a promising functional biomaterial owing to its excellent biocompatibility and strong out-of-plane piezoelectricity. Practical applications require glycine films to be manufactured with their strong piezoelectric polar 〈001〉 direction aligned with the film thickness. Based on the recently-developed solidification approach of a polyvinyl alcohol (PVA) and glycine aqueous solution, in this work, we demonstrate that the crystal orientation of the as-synthesized film is determined by the orientation of glycine crystal nuclei. By controlling the local nucleation kinetics via surface curvature tuning, we shifted the nucleation site from the edge to the middle of the liquid film, and thereby aligned the 〈001〉 direction vertically. As a result, the PVA–glycine–PVA sandwich film exhibits the highest aver-age piezoelectric coefficient d 33 of 6.13 ± 1.13 pC N −1 . This work demonstrates a promising kinetic approach to achieve crystallization and property control in a scalable biocrystal manufacturing process.  more » « less
Award ID(s):
2220274
PAR ID:
10407121
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Journal of Materials Chemistry B
Volume:
10
Issue:
36
ISSN:
2050-750X
Page Range / eLocation ID:
6958 to 6964
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; ; ; ; ; ; ; ; ; et al (, APL Materials)
    Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence on their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb2 flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (211) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1̄10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection of high-energy electron diffraction patterns, misfit dislocation formation, surface morphology, and transport properties. Our DFT calculations show that the preferential orientation of the rhombohedral Sb (211) plane may originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi1−xSbx thin films with similar lattice parameters and an identical crystal structure, as well as functional heterostructures of them with III–V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation. 
    more » « less
  2. ; ; ; (, The Journal of Chemical Physics)
    MnO(001) thin films were grown on commercial MgO(001) substrates at 520 °C by reactive molecular beam epitaxy (MBE) using Mn vapor and O2-seeded supersonic molecular beams (SMBs) both with and without radio frequency (RF) plasma excitation. For comparison, MnO(001) films were grown by reactive MBE using O2 from a leak valve. X-ray photoelectron spectroscopy confirmed the Mn2+ oxidation state and 10%–15% excess oxygen near the growth surface. Reflection high-energy electron diffraction and x-ray diffraction evidenced that the films were rock salt cubic MnO with very strong (001) orientation. High-angle annular dark field scanning transmission electron microscopy with energy-dispersive x-ray spectroscopy demonstrated abrupt MnO/MgO interfaces and indicated [(001)MnO||(001)MgO] epitaxial growth. Ex situ atomic force microscopy of films deposited without RF excitation revealed smooth growth surfaces. An SMB-grown MnO(001) film was converted to Mn3O4 with strong (110) orientation by post-growth exposure to an RF-discharge (RFD) SMB source providing O atoms; the surface of the resultant film contained elongated pits aligned with the MgO110 directions. In contrast, using the RFD-SMB source for growth resulted in MnO(001) films with elongated growth pits and square pyramidal hillocks aligned along the MgO110 and 100 directions, respectively. 
    more » « less
  3. ; ; ; ; ; ; ; ; ; ; et al (, Journal of Applied Crystallography)
    The effect of an electric field on local domain structure near a 24° tilt grain boundary in a 200 nm-thick Pb(Zr0.2Ti0.8)O3bi-crystal ferroelectric film was probed using synchrotron nanodiffraction. The bi-crystal film was grown epitaxially on SrRuO3-coated (001) SrTiO324° tilt bi-crystal substrates. From the nanodiffraction data, real-space maps of the ferroelectric domain structure around the grain boundary prior to and during application of a 200 kV cm−1electric field were reconstructed. In the vicinity of the tilt grain boundary, the distributions of densities ofc-type tetragonal domains with thecaxis aligned with the film normal were calculated on the basis of diffracted intensity ratios ofc- anda-type domains and reference powder diffraction data. Diffracted intensity was averaged along the grain boundary, and it was shown that the density ofc-type tetragonal domains dropped to ∼50% of that of the bulk of the film over a range ±150 nm from the grain boundary. This work complements previous results acquired by band excitation piezoresponse force microscopy, suggesting that reduced nonlinear piezoelectric response around grain boundaries may be related to the change in domain structure, as well as to the possibility of increased pinning of domain wall motion. The implications of the results and analysis in terms of understanding the role of grain boundaries in affecting the nonlinear piezoelectric and dielectric responses of ferroelectric materials are discussed. 
    more » « less
  4. ; ; ; ; ; ; ; ; ; ; et al (, Sensors)
    A protocol for successfully depositing [001] textured, 2–3 µm thick films of Al0.75Sc0.25N, is proposed. The procedure relies on the fact that sputtered Ti is [001]-textured α-phase (hcp). Diffusion of nitrogen ions into the α-Ti film during reactive sputtering of Al0.75,Sc0.25N likely forms a [111]-oriented TiN intermediate layer. The lattice mismatch of this very thin film with Al0.75Sc0.25N is ~3.7%, providing excellent conditions for epitaxial growth. In contrast to earlier reports, the Al0.75Sc0.25N films prepared in the current study are Al-terminated. Low growth stress (<100 MPa) allows films up to 3 µm thick to be deposited without loss of orientation or decrease in piezoelectric coefficient. An advantage of the proposed technique is that it is compatible with a variety of substrates commonly used for actuators or MEMS, as demonstrated here for both Si wafers and D263 borosilicate glass. Additionally, thicker films can potentially lead to increased piezoelectric stress/strain by supporting application of higher voltage, but without increase in the magnitude of the electric field. 
    more » « less
  5. ; ; ; ; ; (, Applied Physics Letters)
    Understanding the depolarization of ferroelectric materials caused by external stimuli is critical for maintaining the aligned polarization states. Although thermal depolarization in poled materials is well established, the mechanisms of electric field-induced depolarization remain largely unexplored. In this study, we investigate the electrical depoling behavior of [001]-oriented rhombohedral Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystals poled using direct current poling (DCP) and alternating current poling (ACP). We reveal that the ACP sample exhibits a lower reverse coercive field than the DCP specimen. We compare the effects of bipolar and unipolar electric fields applied in the reverse poling direction, analyzing the changes in permittivity and piezoelectric resonance. Piezoresponse force microscopy is employed to characterize domain configurations in poled and electrically depoled samples. Our findings suggest that property degradation may arise from the nucleation and growth of domains oriented opposite to the initial arrangement. 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email