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Record low resistivities of 10 and 30 Ω cm and room-temperature free hole concentrations as high as 3 × 10 18 cm −3 were achieved in bulk doping of Mg in Al 0.6 Ga 0.4 N films grown on AlN single crystalline wafer and sapphire. The highly conductive films exhibited a low ionization energy of 50 meV and impurity band conduction. Both high Mg concentration (>2 × 10 19 cm −3 ) and low compensation were required to achieve impurity band conduction and high p-type conductivity. The formation of V N -related compensators was actively suppressed by chemical potential control during the deposition process. This work overcomes previous limitations in p-type aluminum gallium nitride (p-AlGaN) and offers a technologically viable solution to high p-conductivity in AlGaN and AlN.
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High conductivity and low activation energy in p-type AlGaN
Record-low p-type resistivities of 9.7 and 37 Ω cm were achieved in Al 0.7 Ga 0.3 N and Al 0.8 Ga 0.2 N films, respectively, grown on single-crystal AlN substrate by metalorganic chemical vapor deposition. A two-band conduction model was introduced to explain the anomalous thermal behavior of resistivity and the Hall coefficient. Relatively heavy Mg doping (5 × 10 19 cm −3 ), in conjunction with compensation control, enabled the formation of an impurity band exhibiting a shallow activation energy of ∼30 meV for a wide temperature range. Valence band conduction associated with a large Mg ionization energy was dominant above 500 K. The apparently anomalous results deviating from the classical semiconductor physics were attributed to fundamentally different Hall scattering factors for impurity and valence band conduction. This work demonstrates the utility of impurity band conduction to achieve technologically relevant p-type conductivity in Al-rich AlGaN.
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- PAR ID:
- 10437311
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 122
- Issue:
- 9
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 092103
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Journal Article:
- https://doi.org/10.1063/5.0141863
