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Abstract Multi‐layer electrical interconnects are critical for the development of integrated soft wearable electronic systems, in which functional devices from different layers need to be connected together by vertical interconnects. In this work, electrohydrodynamic (EHD) printing technology is studied to achieve multi‐layer flexible and stretchable electronics by direct printing vertical interconnects as vertical interconnect accesses (VIAs) using a low‐melting‐point metal alloy. The EHD printed metallic vertical interconnection represents a promising way for the direct fabrication of multilayer integrated electronics with metallic conductivity and excellent flexibility and stretchability. By controlling the printing conditions, vertical interconnects that can bridge different heights can be fabricated. To achieve reliable VIA connections under bending and stretching conditions, an epoxy protective structure is printed around the VIA interconnects to form a core‐shell structure. A stable electrical response is achieved under hundreds of bending cycles and during stretching/releasing cycles in a large range of tensile strain (0–40%) for the printed conductors with VIA interconnects. A few multi‐layer devices, including a multiple layer heater, and a pressure‐based touch panel are fabricated to demonstrate the capability of the EHD printing for the direct fabrication of vertical metallic VIA interconnects for flexible and stretchable devices.
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All Electrohydrodynamic Printed Flexible Organic Thin Film Transistors
Abstract The demand of cost‐effective fabrication of printed flexible transistors has dramatically increased in recent years due to the need for flexible interface devices for various application including e‐skins, wearables, and medical patches. In this study, electrohydrodynamic (EHD) printing processes are developed to fabricate all the components of polymer‐based organic thin film transistors (OTFTs), including source/drain and gate electrodes, semiconductor channel, and gate dielectrics, which streamline the fabrication procedure for flexible OTFTs. The flexible transistors with top‐gate‐bottom‐contact configuration are fabricated by integrating organic semiconductor (i.e., poly(3‐hexylthiophene‐2,5‐diyl) blended with small molecule 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene), conductive polymer (i.e., poly (3,4‐ethylenedioxythiophene) polystyrene sulfonate), and ion‐gel dielectric. These functional inks are carefully designed with orthogonal solvents to enable their compatible printing into multilayered flexible OTFTs. The EHD printing process of each functional component is experimentally characterized and optimized. The fully EHD‐printed OTFTs show good electrical performance with mobility of 2.86 × 10−1cm2V−1s−1and on/off ratio of 104, and great mechanical flexibility with small mobility change at bending radius of 6 mm and stable transistor response under hundreds of bending cycles. The demonstrated all printing‐based fabrication process provides a cost‐effective route toward flexible electronics with OTFTs.
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- Award ID(s):
- 2134664
- PAR ID:
- 10441340
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials Technologies
- Volume:
- 8
- Issue:
- 17
- ISSN:
- 2365-709X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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