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1. Exploring the Limitations of Environment Lighting on Optical See-Through Head-Mounted Displays

   https://doi.org/10.1145/3385959.3418445  

   Erickson, Austin ; Kim, Kangsoo ; Bruder, Gerd ; Welch, Gregory F. ( October 2020 , ACM Symposium on Spatial User Interaction)

   null (Ed.)

   Due to the additive light model employed by most optical see-through head-mounted displays (OST-HMDs), they provide the best augmented reality (AR) views in dark environments, where the added AR light does not have to compete against existing real-world lighting. AR imagery displayed on such devices loses a significant amount of contrast in well-lit environments such as outdoors in direct sunlight. To compensate for this, OST-HMDs often use a tinted visor to reduce the amount of environment light that reaches the user’s eyes, which in turn results in a loss of contrast in the user’s physical environment. While these effects are well known and grounded in existing literature, formal measurements of the illuminance and contrast of modern OST-HMDs are currently missing. In this paper, we provide illuminance measurements for both the Microsoft HoloLens 1 and its successor the HoloLens 2 under varying environment lighting conditions ranging from 0 to 20,000 lux. We evaluate how environment lighting impacts the user by calculating contrast ratios between rendered black (transparent) and white imagery displayed under these conditions, and evaluate how the intensity of environment lighting is impacted by donning and using the HMD. Our results indicate the further need for refinement in the design of future OST-HMDs to optimize contrast in environments with illuminance values greater than or equal to those found in indoor working environments. 

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2. An Extended Analysis on the Benefits of Dark Mode User Interfaces in Optical See-Through Head-Mounted Displays

   https://doi.org/10.1145/3456874  

   Erickson, Austin ; Kim, Kangsoo ; Lambert, Alexis ; Bruder, Gerd ; Browne, Michael P. ; Welch, Gregory F. ( May 2021 , ACM Transactions on Applied Perception)

   null (Ed.)

   Light-on-dark color schemes, so-called “Dark Mode,” are becoming more and more popular over a wide range of display technologies and application fields. Many people who have to look at computer screens for hours at a time, such as computer programmers and computer graphics artists, indicate a preference for switching colors on a computer screen from dark text on a light background to light text on a dark background due to perceived advantages related to visual comfort and acuity, specifically when working in low-light environments. In this article, we investigate the effects of dark mode color schemes in the field of optical see-through head-mounted displays (OST-HMDs), where the characteristic “additive” light model implies that bright graphics are visible but dark graphics are transparent . We describe two human-subject studies in which we evaluated a normal and inverted color mode in front of different physical backgrounds and different lighting conditions. Our results indicate that dark mode graphics displayed on the HoloLens have significant benefits for visual acuity and usability, while user preferences depend largely on the lighting in the physical environment. We discuss the implications of these effects on user interfaces and applications. 

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3. Analysis of the Saliency of Color-Based Dichoptic Cues in Optical See-Through Augmented Reality

   https://doi.org/10.1109/TVCG.2022.3195111  

   Erickson, Austin ; Bruder, Gerd ; Welch, Gregory F. ( July 2022 , IEEE Transactions on Visualization and Computer Graphics)

   In a future of pervasive augmented reality (AR), AR systems will need to be able to efficiently draw or guide the attention of the user to visual points of interest in their physical-virtual environment. Since AR imagery is overlaid on top of the user's view of their physical environment, these attention guidance techniques must not only compete with other virtual imagery, but also with distracting or attention-grabbing features in the user's physical environment. Because of the wide range of physical-virtual environments that pervasive AR users will find themselves in, it is difficult to design visual cues that “pop out” to the user without performing a visual analysis of the user's environment, and changing the appearance of the cue to stand out from its surroundings. In this paper, we present an initial investigation into the potential uses of dichoptic visual cues for optical see-through AR displays, specifically cues that involve having a difference in hue, saturation, or value between the user's eyes. These types of cues have been shown to be preattentively processed by the user when presented on other stereoscopic displays, and may also be an effective method of drawing user attention on optical see-through AR displays. We present two user studies: one that evaluates the saliency of dichoptic visual cues on optical see-through displays, and one that evaluates their subjective qualities. Our results suggest that hue-based dichoptic cues or “Forbidden Colors” may be particularly effective for these purposes, achieving significantly lower error rates in a pop out task compared to value-based and saturation-based cues. 

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4. Effects of Optical See-Through Displays on Self-Avatar Appearance in Augmented Reality

   https://doi.org/10.1109/ISMAR-Adjunct57072.2022.00077  

   Doroodchi, Meelad ; Ramos, Priscilla ; Erickson, Austin ; Furuya, Hiroshi ; Benjamin, Juanita ; Bruder, Gerd ; Welch, Gregory F. ( October 2022 , Proc.of the IEEE International Symposium on Mixed and Augmented Reality (ISMAR) Workshop on Inclusion, Diversity, Equity, Accessibility, Transparency, and Ethics in XR (IDEATExR))

   Display technologies in the fields of virtual and augmented reality affect the appearance of human representations, such as avatars used in telepresence or entertainment applications, based on the user’s current viewing conditions. With changing viewing conditions, it is possible that the perceived appearance of one’s avatar changes in an unexpected or undesired manner, which may change user behavior towards these avatars and cause frustration in using the AR display. In this paper, we describe a user study (N=20) where participants saw themselves in a mirror standing next to their own avatar through use of a HoloLens 2 optical see-through head-mounted display. Participants were tasked to match their avatar’s appearance to their own under two environment lighting conditions (200 lux and 2,000 lux). Our results showed that the intensity of environment lighting had a significant effect on participants selected skin colors for their avatars, where participants with dark skin colors tended to make their avatar’s skin color lighter, nearly to the level of participants with light skin color. Further, in particular female participants made their avatar’s hair color darker for the lighter environment lighting condition. We discuss our results with a view on technological limitations and effects on the diversity of avatar representations on optical see-through displays. 

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5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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