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Abstract Electrically pumped lasing from hybrid organic–inorganic metal‐halide perovskite semiconductors could lead to nonepitaxial diode lasers that are tunable throughout the visible and near‐infrared spectrum; however, a viable laser diode architecture has not been demonstrated to date. Here, an important step toward this goal is achieved by demonstrating two distinct distributed feedback light‐emitting diode architectures that achieve low threshold, optically pumped lasing. Bottom‐ and top‐emitting perovskite light‐emitting diodes are fabricated on glass and Si substrates, respectively, using a polydimethylsiloxane stamp in the latter case to nanoimprint a second‐order distributed feedback grating directly into the methylammonium lead iodide active layer. The devices exhibit room temperature thresholds as low as ≈6 µJ cm−2, a peak external quantum efficiency of ≈0.1%, and a maximum current density of ≈2 A cm−2that is presently limited by degradation associated with excessive leakage current. In this low current regime, electrical injection does not adversely affect the optical pump threshold, leading to a projected threshold current density of ≈2 kA cm−2. Operation at low temperature can significantly decrease this threshold, but must overcome extrinsic carrier freeze‐out in the doped organic transport layers to maintain a reasonable drive voltage.
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Nanosecond‐Pulsed Perovskite Light‐Emitting Diodes at High Current Density
Abstract While metal‐halide perovskite light‐emitting diodes (PeLEDs) hold the potential for a new generation of display and lighting technology, their slow operation speed and response time limit their application scope. Here, high‐speed PeLEDs driven by nanosecond electrical pulses with a rise time of 1.2 ns are reported with a maximum radiance of approximately 480 kW sr−1 m−2at 8.3 kA cm−2, and an external quantum efficiency (EQE) of 1% at approximately 10 kA cm−2, through improved device configuration designs and material considerations. Enabled by the fast operation of PeLEDs, the temporal response provides access to transient charge carrier dynamics under electrical excitation, revealing several new electroluminescence quenching pathways. Finally, integrated distributed feedback (DFB) gratings are explored, which facilitate more directional light emission with a maximum radiance of approximately 1200 kW sr−1 m−2at 8.5 kA cm−2, a more than two‐fold enhancement to forward radiation output.
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- PAR ID:
- 10446212
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 33
- Issue:
- 44
- ISSN:
- 0935-9648
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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