Menéndez, José, Xu, Chi, and Kouvetakis, John. Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge. Retrieved from https://par.nsf.gov/biblio/10450655. Materials Science in Semiconductor Processing 164.C Web. doi:10.1016/j.mssp.2023.107596.

Menéndez, José, Xu, Chi, & Kouvetakis, John. Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge. Materials Science in Semiconductor Processing, 164 (C). Retrieved from https://par.nsf.gov/biblio/10450655. https://doi.org/10.1016/j.mssp.2023.107596

Menéndez, José, Xu, Chi, and Kouvetakis, John. "Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge". Materials Science in Semiconductor Processing 164 (C). Country unknown/Code not available. https://doi.org/10.1016/j.mssp.2023.107596. https://par.nsf.gov/biblio/10450655.

@article{osti_10450655,
place = {Country unknown/Code not available}, title = {Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge}, url = {https://par.nsf.gov/biblio/10450655}, DOI = {10.1016/j.mssp.2023.107596}, abstractNote = {}, journal = {Materials Science in Semiconductor Processing}, volume = {164}, number = {C}, author = {Menéndez, José and Xu, Chi and Kouvetakis, John}, }