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Title: Defect‐Enhanced Polarization Switching in the Improper Ferroelectric LuFeO 3
Abstract

Results of switching behavior of the improper ferroelectric LuFeO3are presented. Using a model set of films prepared under controlled chemical and growth‐rate conditions, it is shown that defects can reduce the quasi‐static switching voltage by up to 40% in qualitative agreement with first‐principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO3. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.

 
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Award ID(s):
1708615
NSF-PAR ID:
10457615
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Materials
Volume:
32
Issue:
23
ISSN:
0935-9648
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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