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Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: ScxGa1−xN/GaN and ScxAl1−xN/AlN grown by molecular beam epitaxy (MBE). In the ScxGa1−xN/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 1019 cm−3, with an increase directly correlated with the scandium content. In the ScxAl1−xN–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al2O3template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 1019and 1021 cm−3, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers.
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Synthesis of graded CdS 1−x Se x nanoplatelet alloys and heterostructures from pairs of chalcogenoureas with tailored conversion reactivity
A mixture ofN,N,N′-trisubstituted thiourea and cyclicN,N,N′,N′-tetrasubstituted selenourea precursors were used to synthesize three monolayer thick CdS1−xSexnanoplatelets in a single synthetic step.
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- PAR ID:
- 10473742
- Publisher / Repository:
- Chemical Science
- Date Published:
- Journal Name:
- Chemical Science
- Volume:
- 14
- Issue:
- 43
- ISSN:
- 2041-6520
- Page Range / eLocation ID:
- 12345 to 12354
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/D3SC03384H
