Abstract Heat dissipation is a severe barrier for ever‐smaller and more functionalized electronics, necessitating the continuous development of accessible, cost‐effective, and highly efficient cooling solutions. Metals, such as silver and copper, with high thermal conductivity, can efficiently remove heat. However, ultralow infrared thermal emittance (<0.03) severely restricts their radiative heat dissipation capability. Here, a solution‐processed chemical oxidation reaction is demonstrated for transfiguring “infrared‐white” metals (high infrared thermal reflectance) to “infrared‐black” metametals (high infrared thermal emittance). Enabled by strong molecular vibrations of metal‐oxygen chemical bonds, this strategy via assembling nanostructured metal oxide thin films on metal surface yields infrared spectrum manipulation, high and omnidirectional thermal emittance (0.94 from 0 to 60°) with excellent thermomechanical stability. The thin film of metal oxides with relatively high thermal conductivity does not hinder heat dissipation. “Infrared‐black” meta‐aluminum shows a temperature drop of 21.3 °C corresponding to a cooling efficiency of 17.2% enhancement than the pristine aluminum alloy under a heating power of 2418 W m−2. This surface photon‐engineered strategy is compatible with other metals, such as copper and steel, and it broadens its implementation for accelerating heat dissipation.
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Optimized Thin Film Processing of Sodium Mixed Oxy-Sulfide-Nitride Glassy Solid Electrolytes for All-Solid-State Batteries
Na4P2S7-6xO4.62xN0.92x (NaPSON) glassy solid electrolytes (GSEs) were prepared and tested for their electrochemical properties and processability into thin films. The x = 0.2 composition (NaPSON-2) was found to be highly conducting, non-crystallizable, largely stable against Na-metal and supports symmetric cell cycling up to >100 µA cm-2 without shorting and for these reasons was processed into thin films drawn to 50 m and tested in symmetric and asymmetric cells. Measurements of the sodium ion conductivity using symmetric cells demonstrated that the conductivity of NaPSON-2 was unchanged by film forming. Galvanostatic cycling at 5 A cm-2 of 1.3 mm NaPSON-2 showed stability over 450 hours, while cycling a 50 m thin film showed a very slow growth in the resistance. Cyclic voltammetry and x-ray photoelectron spectroscopy of the NaPSON-2 thin film GSE revealed that it did not react with Na-metal at its surface, but rather in the bulk of the film, showing S, Na2S, and Na3P reaction products. The source of the surface stability was determined to be the preferential segregation of trigonally coordinated nitrogen. These low-cost and easily processed NaPSON GSEs provide a system of materials which could provide for significantly lower cost higher energy density grid-scale batteries.
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- Award ID(s):
- 1936913
- PAR ID:
- 10480289
- Publisher / Repository:
- American Chemical Society
- Date Published:
- Journal Name:
- ACS Applied Energy Materials
- Volume:
- 6
- Issue:
- 11
- ISSN:
- 2574-0962
- Page Range / eLocation ID:
- 5842 to 5855
- Subject(s) / Keyword(s):
- mixed oxy-sulfide-nitride glass solid-state electrolyte sulfide electrolyte thin film processing thin film electrochemical properties
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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