Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s
as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values
exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being
implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns
RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not
at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD
operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa
device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the
center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra
have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at
= 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and
3.0 V both occur around = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs
emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby
the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side,
and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is
attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to
the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker
emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative
recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h.
To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a
large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and
1800 nm with a peak responsivity of ≈0.85 A/W at =1550 nm. Simultaneous I-V and L-V plots were obtained and
are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced
NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum
efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current.
The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of
only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where
ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our
separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve
of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit
definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is
likely limited by Auger scattering, this result for IQE suggests that i might be significantly high.
To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband
tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation
model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the
high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region
on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few
traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling
through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current
density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102
A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When
combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement
with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment.
Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig.
3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs,
and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong
polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug
2 ∙me)/(2h∙P∙E)], where Ug is the
bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for
the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures
approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely
realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature
electroluminescence in the GaAs devices.
[1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981).
[2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995).
[3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961).
[4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).
[5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981).
[6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995).
[7] E.O. Kane, J. of Appl. Phy 32, 83 (1961).
[8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).
more »
« less
Sulfur Vacancy Related Optical Transitions in Graded Alloys of Mo x W 1‐x S 2 Monolayers
Engineering electronic bandgaps is crucial for applications in information technology, sensing, and renewable energy. Transition metal dichalcogenides (TMDCs) offer a versatile platform for bandgap modulation through alloying, doping, and heterostructure formation. Here, the synthesis of a 2D MoxW1‐xS2graded alloy is reported, featuring a Mo‐rich center that transitions to W‐rich edges, achieving a tunable bandgap of 1.85 to 1.95 eV when moving from the center to the edge of the flake. Aberration‐corrected high‐angle annular dark‐field scanning transmission electron microscopy showed the presence of sulfur monovacancy, VS, whose concentration varied across the graded MoxW1‐xS2layer as a function of Mo content with the highest value in the Mo‐rich center region. Optical spectroscopy measurements supported by ab initio calculations reveal a doublet electronic state of VS, which is split due to the spin‐orbit interaction, with energy levels close to the conduction band or deep in the bandgap depending on whether the vacancy is surrounded by W atoms or Mo atoms. This unique electronic configuration of VSin the alloy gave rise to four spin‐allowed optical transitions between the VSlevels and the valence bands. The study demonstrates the potential of defect and optical engineering in 2D monolayers for advanced device applications.
more » « less- NSF-PAR ID:
- 10491009
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Optical Materials
- Volume:
- 12
- Issue:
- 11
- ISSN:
- 2195-1071
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
more » « less
Abstract A new interstellar molecule, FeC (
X 3Δi ), has been identified in the circumstellar envelope of the carbon-rich asymptotic giant branch star IRC+10216. FeC is the second iron-bearing species conclusively observed in the interstellar medium, in addition to FeCN, also found in IRC+10216. TheJ = 4 → 3, 5 → 4, and 6 → 5 rotational transitions of this free radical near 160, 201, and 241 GHz, respectively, were detected in the lowest spin–orbit ladder, Ω = 3, using the Submillimeter Telescope of the Arizona Radio Observatory (ARO) for the 1 mm lines and the ARO 12 m at 2 mm. Because the ground state of FeC is inverted, these transitions are the lowest energy lines. The detected features exhibit slight U shapes with LSR velocities nearV LSR≈ −26 km s−1and linewidths of ΔV 1/2≈ 30 km s−1, line parameters characteristic of IRC+10216. Radiative transfer modeling of FeC suggests that the molecule has a shell distribution with peak radius near 300R *(∼6″) extending out to ∼500R *(∼10″) and a fractional abundance, relative to H2, off ∼ 6 × 10−11. The previous FeCN spectra were also modeled, yielding an abundance off ∼ 8 × 10−11in a larger shell situated near 800R *. These distributions suggest that FeC may be the precursor species for FeCN. Unlike cyanides and carbon-chain molecules, diatomic carbides with a metallic element are rare in IRC+10216, with FeC being the first such detection. -
Two-dimensional (2D) tungsten disulfide nanosheets (WS2) could be a promising candidate for high-performance self-powered photodetectors. The present 2D nanosheets were obtained from liquid exfoliation in a mixture of ethanol, methanol, and isopropanol via a direct dispersion and ultrasonication method. Using the spin-coating technique, a thin film of uniform thickness was formed on the SiO2/Si substrate. Energy-dispersive X-ray analysis showed that the S/W ratio in the fabricated WS2 film was around 1.2 to 1.34, indicating certain deficiencies in the S atoms. These S vacancies induce localized states within the bandgap of pristine WS2, resulting in a higher conductivity in the exfoliated sample. The obtained thin film seems to be highly efficient in photoelectric conversion, with a responsivity of ~0.12 mA/W at 670 nm under zero bias voltage, with an intensity of 5.2 mW/cm2. Instead, at a bias of 2 V, it exhibits a responsivity of 12.74 mA/W and a detectivity of 1.17 × 1010 cm Hz1/2 W− 1 at 4.1 mW/cm2. The present 2D nanosheets exhibit high photon absorption in a wide range of spectra from the near infrared (IR) to near UV spectrum.more » « less
-
The millimeter/submillimeter-wave spectrum of the SiP radical (X 2 Π i ) has been recorded using direct absorption spectroscopy in the frequency range of 151–532 GHz. SiP was synthesized in an AC discharge from the reaction of SiH 4 and gas-phase phosphorus, in argon carrier gas. Both spin–orbit ladders were observed. Fifteen rotational transitions were measured originating in the Ω = 3/2 ladder, and twelve in the Ω = 1/2 substate, each exhibiting lambda doubling and, at lower frequencies, hyperfine interactions from the phosphorus nuclear spin of I = 1/2. The lambda-doublets in the Ω = 1/2 levels appeared to be perturbed at higher J, with the f component deviating from the predicted pattern, likely due to interactions with the nearby excited A 2 Σ + electronic state, where ΔE Π-Σ ∼ 430 cm −1 . The data were analyzed using a Hund’s case a β Hamiltonian and rotational, spin–orbit, lambda-doubling, and hyperfine parameters were determined. A 2 Π/ 2 Σ deperturbation analysis was also performed, considering spin–orbit, spin-electronic, and L-uncoupling interactions. Although SiP is clearly not a hydride, the deperturbed parameters derived suggest that the pure precession hypothesis may be useful in assessing the 2 Π/ 2 Σ interaction. Interpretation of the Fermi contact term, b F , the spin-dipolar constant, c, and the nuclear spin-orbital parameter, a, indicates that the orbital of the unpaired electron is chiefly p π in character. The bond length in the v = 0 level was found to be r 0 = 2.076 Å, suggestive of a double bond between the silicon and phosphorus atoms.more » « less
-
more » « less
Abstract 2D materials, such as transition metal dichalcogenides (TMDs), graphene, and boron nitride, are seen as promising materials for future high power/high frequency electronics. However, the large difference in the thermal expansion coefficient (TEC) between many of these 2D materials could impose a serious challenge for the design of monolayer‐material‐based nanodevices. To address this challenge, alloy engineering of TMDs is used to tailor their TECs. Here, in situ heating experiments in a scanning transmission electron microscope are combined with electron energy‐loss spectroscopy and first‐principles modeling of monolayer Mo1−
x Wx S2with different alloying concentrations to determine the TEC. Significant changes in the TEC are seen as a function of chemical composition in Mo1−x Wx S2, with the smallest TEC being reported for a configuration with the highest entropy. This study provides key insights into understanding the nanoscale phenomena that control TEC values of 2D materials.
