The mid-IR spectroscopic properties of doped low-phonon and crystals grown by the Bridgman technique have been investigated. Using optical excitations at and , both crystals exhibited IR emissions at , , , and at room temperature. The mid-IR emission at 4.5 µm, originating from the transition, showed a long emission lifetime of for doped , whereas doped exhibited a shorter lifetime of . The measured emission lifetimes of the state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the transition in doped and were determined to be and , respectively. The results of Judd–Ofelt analysis are presented and discussed.
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Thermally generated spin current in the topological insulator Bi 2 Se 3
We present measurements of thermally generated transverse spin currents in the topological insulator Bi2Se3, thereby completing measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnetoresistance for bilayers of Bi2Se3/CoFeB. We find that Bi2Se3does generate substantial thermally driven spin currents. A lower bound for the ratio of spin current density to thermal gradient is = (4.9 ± 0.9) × 106 , and a lower bound for the magnitude of the spin Nernst ratio is −0.61 ± 0.11. The spin Nernst ratio for Bi2Se3is the largest among all materials measured to date, two to three times larger compared to previous measurements for the heavy metals Pt and W. Strong thermally generated spin currents in Bi2Se3can be understood via Mott relations to be due to an overall large spin Hall conductivity and its dependence on electron energy.
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- PAR ID:
- 10504534
- Publisher / Repository:
- American Association for the Advancement of Science
- Date Published:
- Journal Name:
- Science Advances
- Volume:
- 9
- Issue:
- 50
- ISSN:
- 2375-2548
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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