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Title: Redox Upconversion and Electrocatalytic Cycles in Activation of Si–Si Bonds: Diverging Reactivity in Hole- and Electron-Catalyzed Transformations
Award ID(s):
2102579
PAR ID:
10507166
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
ACS
Date Published:
Journal Name:
The Journal of Physical Chemistry C
Volume:
128
Issue:
11
ISSN:
1932-7447
Page Range / eLocation ID:
4581 to 4599
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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  1. Si is an n-type dopant in Ga2O3 that can be introduced intentionally or unintentionally. The results of Secondary Ion Mass Spectrometry, Hall effect, and infrared absorption experiments show that the hydrogen plasma exposure of Si-doped Ga2O3 leads to the formation of complexes containing Si and H and the passivation of n-type conductivity. The Si-H (D) complex gives rise to an O-H (D) vibrational line at 3477.6 (2577.8) cm-1 and is shown to contain a single H (or D) atom. The direction of the transition moment of this defect has been investigated to provide structure-sensitive information. Theory suggests possible structures for an OH-Si complex that are consistent with its observed vibrational properties. 
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