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A single-beam plasma source was developed and used to deposit hydrogenated amorphous carbon (a-C:H) thin films at room temperature. The plasma source was excited by a combined radio frequency and direct current power, which resulted in tunable ion energy over a wide range. The plasma source could effectively dissociate the source hydrocarbon gas and simultaneously emit an ion beam to interact with the deposited film. Using this plasma source and a mixture of argon and C2H2 gas, a-C:H films were deposited at a rate of ∼26 nm/min. The resulting a-C:H film of 1.2 µm thick was still highly transparent with a transmittance of over 90% in the infrared range and an optical bandgap of 2.04 eV. Young’s modulus of the a-C:H film was ∼80 GPa. The combination of the low-temperature high-rate deposition of transparent a-C:H films with moderately high Young’s modulus makes the single-beam plasma source attractive for many coatings applications, especially in which heat-sensitive and soft materials are involved. The single-beam plasma source can be configured into a linear structure, which could be used for large-area coatings.
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Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4)
Direct bandgap group IV materials could provide intimate integration of lasers, amplifiers, and compact modulators within complementary metal–oxide–semiconductor for smaller, active silicon photonics. Dilute germanium carbides (GeC) with ∼1 at. % C offer a direct bandgap and strong optical emission, but energetic carbon sources such as plasmas and e-beam evaporation produce defective materials. In this work, we used CBr4 as a low-damage source of carbon in molecular beam epitaxy of tin-free GeC, with smooth surfaces and narrow x-ray diffraction peaks. Raman spectroscopy showed substitutional incorporation of C and no detectable sp2 bonding from amorphous or graphitic carbon, even without surfactants. Photoluminescence shows strong emission compared with Ge.
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- Award ID(s):
- 2122041
- PAR ID:
- 10509568
- Publisher / Repository:
- J. Appl. Phys.
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 134
- Issue:
- 18
- ISSN:
- 0021-8979
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1063/5.0172330
