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Title: Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure
An in situ metal-organic chemical vapor phase epitaxy is used to grow a complete AlGaN/GaN metal oxide semiconductor heterojunction field effect transistor (MOSHFET) structure, gated by a gallium oxide (Ga2O3) layer; we observed reduction in the interfacial trap density compared to its version wherein the Ga2O3 was grown ex situ, after breaking the vacuum, all else being the same. A remarkable decrease in the interfacial charge density for in situ MOSHFET structures in the range of 70%–88% for 10–30 nm oxide layer thickness and improvements in other electrical parameters required for high-performing devices were observed.  more » « less
Award ID(s):
2329786 2124624
PAR ID:
10510404
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Publisher / Repository:
pubs.aip.org/aip/apl
Date Published:
Journal Name:
Applied Physics Letters
Volume:
124
Issue:
11
ISSN:
0003-6951
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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