A Ti2AlN MAX phase layered thin film electrode and oxygen getter layer for HfO2‐based two‐terminal memristors is presented. The Ti2AlN/HfOx/Ti memristor devices exhibit enhanced resistive switching performance, including an ultra‐low reset current density (< 10−8 M
This content will become publicly available on August 26, 2025
- Award ID(s):
- 2106225
- NSF-PAR ID:
- 10538350
- Author(s) / Creator(s):
- ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more »
- Editor(s):
- Cranford, Steve
- Publisher / Repository:
- Elsevier
- Date Published:
- Journal Name:
- Matter
- ISSN:
- 2590-2385
- Subject(s) / Keyword(s):
- memristor phase separation retention oxygen diffusion phase-field model amorphous
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Ω cm2), substantial on‐off ratio (≈ 6000), excellent multi‐level functionality (≈ 9 distinct states), impressive retention (up to 300 °C), and robust endurance (>200 million) as compared to conventional TiN and other alternative materials based memristors. Experimental measurements and modeling suggest that the distinctive combination of low thermal conductivity, high electrical conductivity, and unique ultra‐thin layer‐by‐layer structure of the Ti2AlN MAX phase thin film contribute to this exceptional performance with good reproducibility and stability. The results demonstrate for the first‐time the potential of this innovative sputtered MAX phase material for engineering energy‐efficient, high‐density non‐volatile digital, and analog memory devices aimed toward next‐generation sustainable artificial intelligence. -
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