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Chemical doping is widely used to manipulate the electrical and thermoelectric properties of organic semiconductors, yet intelligent design of polymer–dopant systems remains elusive. It is challenging to predict the electrical and thermoelectric properties of doped organic semiconductors due to the large number of variables impacting these properties, including film morphology, dopant and polymer energetics, dopant size, and degree of polaron delocalization. Herein, a series of dopants with varying sizes and electron affinities (EAs) are combined with polymers of differing ionization energies (IEs) to investigate how the difference between polymer IE and dopant EA influences the doping efficiency and electrical conductivity, and how the dopant size influences the thermoelectric properties. Our experiments demonstrate that at low doping levels the doping efficiency strongly depends on the difference between the polymer IE and dopant EA; the effectiveness of doping on increasing electrical conductivity drastically decreases at high loadings for the molybdenum dithiolene complexes, while FeCl 3 remains effective at high loadings; and the large molybdenum complexes lead to more delocalized polarons as compared to FeCl 3 . To take advantage of the complementary doping characteristics of the molybdenum complexes and FeCl 3 , both dopants are employed simultaneously to reach high power factors at relatively low dopant concentrations.
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Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution
This paper investigates the microscale engineering aspects of n-type doped GaSb to address the challenges associated with achieving high electrical conductivity and precise dopant distribution in this semiconductor material. AC impedance spectroscopy is employed as a reliable technique to characterize the microstructural and electrical properties of GaSb, providing valuable insights into the impact of grain boundaries on overall electrical performance. The uneven distribution of dopants, caused by diffusion, and the incomplete activation of introduced dopants pose significant obstacles in achieving consistent material properties. To overcome these challenges, a careful selection of alloying elements, such as bismuth, is explored to suppress the formation of native acceptor defects and modulate band structures, thereby influencing the doping and compensator formation processes. Additionally, the paper examines the effect of microwave annealing as a potential solution for enhancing dopant activation, minimizing diffusion, and reducing precipitate formation. Microwave annealing shows promise due to its rapid heating and shorter processing times, making it a viable alternative to traditional annealing methods. The study underscores the need for a stable grain boundary passivation strategy to achieve significant improvements in GaSb material performance. Simple grain size reduction strategies alone do not result in better thermoelectric performance, for example, and increasing the grain boundary area per unit volume exacerbates the issue of free carrier compensation. These findings highlight the complexity of achieving optimal doping in GaSb materials and the importance of innovative analytical techniques and controlled doping processes. The comprehensive exploration of n-type doped GaSb presented in this research provides valuable insights for future advancements in the synthesis and optimization of high-conductivity nanostructured n-type GaSb, with potential applications in thermoelectric devices and other electronic systems.
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- Award ID(s):
- 2110603
- PAR ID:
- 10546579
- Publisher / Repository:
- MDPI
- Date Published:
- Journal Name:
- Micromachines
- Volume:
- 14
- Issue:
- 9
- ISSN:
- 2072-666X
- Page Range / eLocation ID:
- 1801
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3390/mi14091801
