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Abstract Silicon carbide (SiC)'s nonlinear optical properties and applications to quantum information have recently brought attention to its potential as an integrated photonics platform. However, despite its many excellent material properties, such as large thermal conductivity, wide transparency window, and strong optical nonlinearities, it is generally a difficult material for microfabrication. Here, it is shown that directly bonded silicon‐on‐silicon carbide can be a high‐performing hybrid photonics platform that does not require the need to form SiC membranes or directly pattern in SiC. The optimized bonding method yields defect‐free, uniform films with minimal oxide at the silicon–silicon–carbide interface. Ring resonators are patterned into the silicon layer with standard, complimentary metal–oxide–semiconductor (CMOS) compatible (Si) fabrication and measure room‐temperature, near‐infrared quality factors exceeding 105. The corresponding propagation loss is 5.7 dB cm−1. The process offers a wafer‐scalable pathway to the integration of SiC photonics into CMOS devices.
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This content will become publicly available on February 19, 2026
Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching
- PAR ID:
- 10577584
- Publisher / Repository:
- American Chemical Society
- Date Published:
- Journal Name:
- ACS Photonics
- Volume:
- 12
- Issue:
- 2
- ISSN:
- 2330-4022
- Page Range / eLocation ID:
- 1039 to 1046
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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