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1. Photoluminescence from InSb1−xBix alloys at extended wavelengths on InSb

   https://doi.org/10.1063/5.0121657  

   White, R. C.; Nordin, L. J.; Muhowski, A. J.; Wasserman, D.; Bank, S. R. (November 2022, Applied Physics Letters)

   The incorporation of dilute concentrations of bismuth into traditional III–V alloys produces significant reductions in bandgap energy presenting unique opportunities in strain and bandgap engineering. However, the disparity between the ideal growth conditions for the host matrix and those required for substitutional bismuth incorporation has caused the material quality of these III–V–Bi alloys to lag behind that of conventional III–V semiconductors. InSb1−xBix, while experimentally underexplored, is a promising candidate for high-quality III–V–Bi alloys due to the relatively similar ideal growth temperatures for InSb and III–Bi materials. By identifying a highly kinetically limited growth regime, we demonstrate the growth of high-quality InSb1−xBix by molecular beam epitaxy. X-ray diffraction and Rutherford backscattering spectrometry (RBS) measurements of the alloy's bismuth concentration, coupled with smooth surface morphologies as measured by atomic force microscopy, suggest unity-sticking bismuth incorporation for a range of bismuth concentrations from 0.8% to 1.5% as measured by RBS. In addition, the first photoluminescence was observed from InSb1−xBix and demonstrated wavelength extension up to 7.6 μm at 230 K, with a bismuth-induced bandgap reduction of ∼29 meV/% Bi. Furthermore, we report the temperature dependence of the bandgap of InSb1−xBix and observed behavior consistent with that of a traditional III–V alloy. The results presented highlight the potential of InSb1−xBix as an alternative emerging candidate for accessing the longwave-infrared. 

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2. Photo-induced electron paramagnetic resonance: A means to identify defects and the defect level throughout the bandgap of ultrawide bandgap semiconductors

   https://doi.org/10.1063/5.0189934  

   Zvanut, M E; Mollik, Md_Shafiqul Islam; Siford, Mackenzie; Bhandari, Suman (January 2024, Applied Physics Letters)

   Ultrawide bandgap semiconductors (UWBGs) provide great promise for optical devices operating in the near to deep ultraviolet, and recently they have become a viable semiconducting material for high power electronics. From the power grid to electronic vehicles, the intention is to replace massively awkward components with the convenience of a solid state electronic “chip.” Unfortunately, the challenges faced by wide bandgap electronic materials, such as GaN and SiC, increase as the bandgap increases. A point defect, for example, can take on more charge states and energy configurations. This perspective describes a method to investigate the many charge states and their associated transitions—photo-induced electron paramagnetic resonance (photo-EPR) spectroscopy. Although not new to the study of defects in semiconductors, photo-EPR studies can probe the entire ultrawide bandgap given the appropriate light source for excitation. Examples provided here cover specific defects in UWBGs, AlN, and Ga2O3. The discussion also reminds us how the rapid pace of discovery surrounding this newest class of semiconductors is due, in part, to fundamental research studies of the past, some as far back as a century ago and some based on very different materials systems. 

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3. Narrow-bandgap titanium sesquioxide with resonant metasurfaces for enhanced infrared absorption

   https://doi.org/10.1063/5.0240125  

   Babicheva, Viktoriia E; Lock, Evgeniya; Kim, Heungsoo (December 2024, Applied Physics Letters)

   We report on the structural, chemical, and optical properties of titanium sesquioxide Ti2O3 thin films on single-crystal sapphire substrates by pulsed laser deposition. The thin film of Ti2O3 on sapphire exhibits light absorption of around 25%–45% in the wavelength range of 2–10 μm. Here, we design an infrared photodetector structure based on Ti2O3, enhanced by a resonant metasurface, to improve its light absorption in mid-wave and long-wave infrared windows. We show that light absorption in the mid-wave infrared window (wavelength 3–5 μm) in the active Ti2O3 layer can be significantly enhanced from 30%–40% to more than 80% utilizing a thin resonant metasurface made of low-loss silicon, facilitating efficient scattering in the active layer. Furthermore, we compare the absorptance of the Ti2O3 layer with that of conventional semiconductors, such as InSb, InAs, and HgCdTe, operating in the infrared range with a wavelength of 2–10 μm and demonstrate that the absorption in the Ti2O3 film is significantly higher than in these conventional semiconductors due to the narrow-bandgap characteristics of Ti2O3. The proposed designs can be used to tailor the wavelengths of photodetection across the near- and mid-infrared ranges. 

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4. Nonreciprocal Fabry-Perot effect and performance enhancement in a magneto-optical InSb-based Faraday terahertz isolator

   https://doi.org/10.1364/OE.411581  

   Keshock, Elise; Peng, Peisong; Zhou, Jiangfeng; Talbayev, Diyar (December 2020, Optics Express)

   The Faraday effect due to the cyclotron resonance of conduction electrons in semiconductor InSb allows for nonreciprocity of transmitted light in our Faraday THz isolator operating in the presence of a small magnetic field. We select InSb as an efficient medium for our isolator due to its high electron mobility, low electron effective mass, and narrow band gap. Experimental measurements of the isolator performance indicate a maximum achieved isolation power of 18.8 dB with an insertion loss of −12.6 dB. Our optical analysis of the device points to a remarkablenonreciprocalFabry-Perot effect in the magneto-optical InSb layer as the origin of the multi-fold isolation enhancement. This nonreciprocity occurs as the Fabry-Perot reflections in the forward direction add constructively and enhance the transmittance at certain frequencies, while the Fabry-Perot reflections in the backward direction add destructively and suppress the transmittance at the same frequencies. 

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5. Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier

   https://doi.org/10.3390/metrology5020021  

   Orr, Gilad; Azoulay, Moshe; Golan, Gady; Burger, Arnold (June 2025, Metrology)

   GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-bandgap semiconductors, resulting in better radiation resistance. Theoretically, it supports higher speeds as the device dimensions could be reduced without suffering voltage breakdown. The simulation and experimental results illustrate the superior performance of the Gallium Nitride High-Electron-Mobility Transistors in an amplifying circuit. Using a spice model for commercially available Gallium Nitride High-Electron-Mobility Transistors, non-distorted output to an input signal of 200 ps was displayed. Real-world measurements underscore the fast response of the Gallium Nitride High-Electron-Mobility Transistors with its measured slew rate at approximately 3000 V/μs, a result only 17% lower than the result obtained from the simulation. This fast response, coupled with the amplifier radiation resistance, shows promise for designing improved detection and imaging circuits with long Mean Time Between Failure required, for example, by next-generation industrial-process gamma transmission-computed tomography. 

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