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ABSTRACT Despite the improvements seen in efficiency of GaAs cells over the years, there remains room for improvement for it to approach the theoretical single junction limit posited by Shockley and Quiesser decades ago. One of the more pursued options is the growth of quantum wells within the structure of GaAs to enhance its photon absorption below its bandgap. Multiple Quantum Wells (MQW) have been an ongoing topic of research and discussion for the scientific community with structures like InGaAs/GaAs and InGaP/GaAs quantum wells producing promising results that could potentially improve overall energy conversion. Here, we used WEIN2K, a commercial density functional theory package, to study the ternary compound Ga 1-x Tl x As and determine its electronic properties. Using these results combined with experimental confirmation we extend these properties to simulate its application to form a MQW GaAs/ Ga 1-x Tl x As solar cell. Ga 1-x Tl x As is a tunable ternary compound, with its bandgap being strongly dependent on the concentration of Tl present. Concentrations of Tl as low as 7% can reduce the bandgap of Ga 1-x Tl x As to roughly 1.30 eV from GaAs’s 1.45 eV at room temperature with as little as a 1.7% increase in lattice constant. The change in bandgap, accompanied by the relatively small change in lattice constant makes Ga 1-x Tl x As a strong candidate for a MQW cell with little to no strain balancing required within the structure to minimize unwanted defects that impede charge collection within the device. Our GaAs photodiode with TlGaAs MQWs shows an expanded absorption band and improved conversion efficiency over the standard GaAs photovoltaic cell with dilute concentrations of Tl incorporated into the compound.
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This content will become publicly available on November 1, 2025
A Broadband Light‐Trapping Nanostructure for InGaP/GaAs Dual‐Junction Solar Cells Using Nanosphere Lithography‐Assisted Chemical Etching
III–V‐based multijunction solar cells have become the leading power generation technology for space applications due to their high power conversion efficiency and reliable performance in extraterrestrial environments. Thinning down the absorber layers of multijunction solar cells can considerably reduce the production cost and improve their radiation hardness. Recent advances in ultrathin GaAs single‐junction solar cells suggest the development of light‐trapping nanostructures to increase light absorption in optically thin layers within III–V‐based multijunction solar cells. Herein, a novel and highly scalable nanosphere lithography‐assisted chemical etching method to fabricate light‐trapping nanostructures in InGaP/GaAs dual‐junction solar cells is studied. Numerical models show that integrating the nanostructured Al2O3/Ag rear mirror significantly enhances the broadband absorption within the GaAs bottom cell. Results demonstrate that the light‐trapping nanostructures effectively increase the short‐circuit current density in GaAs bottom cells from 14.04 to 15.06 mA cm−2. The simulated nanostructured InGaP/GaAs dual‐junction structure shows improved current matching between the GaAs bottom cell and the InGaP top cell, resulting in 1.12x higher power conversion efficiency. These findings highlight the potential of light‐trapping nanostructures to improve the performance of III‐V‐based multijunction photovoltaic systems, particularly for high‐efficiency applications in space.
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- Award ID(s):
- 2308817
- PAR ID:
- 10587852
- Publisher / Repository:
- Wiley
- Date Published:
- Journal Name:
- Solar RRL
- Volume:
- 8
- Issue:
- 22
- ISSN:
- 2367-198X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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