Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence on their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb2 flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (211) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1̄10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection of high-energy electron diffraction patterns, misfit dislocation formation, surface morphology, and transport properties. Our DFT calculations show that the preferential orientation of the rhombohedral Sb (211) plane may originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi1−xSbx thin films with similar lattice parameters and an identical crystal structure, as well as functional heterostructures of them with III–V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation.
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Equilibrium phase behavior of gyroid-forming diblock polymer thin films
Thin-film confinement of self-assembling block polymers results in materials with myriad potential applications—including membranes and optical devices—and provides design parameters for altering phase behavior that are not available in the bulk, namely, film thickness and preferential wetting. However, most research has been limited to lamella- and cylinder-forming polymers; three-dimensional phases, such as double gyroid (DG), have been observed in thin films, but their phase behavior under confinement is not yet well understood. We use self-consistent field theory to predict the equilibrium morphology of bulk-gyroid-forming AB diblock polymers under thin-film confinement. Phase diagrams reveal that the (211) orientation of DG, often observed in experiments, is stable between nonpreferential boundaries at thicknesses as small as 1.2 times the bulk DG lattice parameter. The (001) orientation is stable between modestly B-preferential boundaries, where B is the majority block, while a different (211)-oriented termination plane is stabilized by strongly B-preferential boundaries, neither of which has been observed experimentally. We then describe two particularly important phenomena for explaining the phase behavior of DG thin films at low film thicknesses. The first is “constructive interference,” which arises when distortions due to the top and bottom boundaries overlap and is significant for certain DG orientations. The second is a symmetry-dependent, in-plane unit-cell distortion that arises because the distorted morphology near the boundary has a different preferred unit-cell size and shape than the bulk. These results provide a thermodynamic portrait of the phase behavior of DG thin films.
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- Award ID(s):
- 2011401
- PAR ID:
- 10590000
- Publisher / Repository:
- J. Chem. Phys.
- Date Published:
- Journal Name:
- The Journal of Chemical Physics
- Volume:
- 161
- Issue:
- 8
- ISSN:
- 0021-9606
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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