Abstract Dislocations, linear defects in a crystalline lattice characterized by their slip systems, can provide a record of grain internal deformation. Comprehensive examination of this record has been limited by intrinsic limitations of the observational methods. Transmission electron microscopy reveals individual dislocations, but images only a few square$$\upmu$$ m of sample. Oxidative decoration requires involved sample preparation and has uncertainties in detection of all dislocations and their types. The possibility of mapping dislocation density and slip systems by conventional (Hough-transform based) EBSD is investigated here with naturally and experimentally deformed San Carlos olivine single crystals. Geometry and dislocation structures of crystals deformed in orientations designed to activate particular slip systems were previously analyzed by TEM and oxidative decoration. A curvature tensor is calculated from changes in orientation of the crystal lattice, which is inverted to calculate density of geometrically necessary dislocations with the Matlab Toolbox MTEX. Densities of individual dislocation types along with misorientation axes are compared to orientation change measured on the deformed crystals. After filtering (denoising), noise floor and calculated dislocation densities are comparable to those reported from high resolution EBSD mapping. For samples deformed in [110]c and [011]c orientations EBSD mapping confirms [100](010) and [001](010), respectively, as the dominant slip systems. EBSD mapping thus enables relatively efficient observation of dislocation structures associated with intracrystalline deformation, both distributed, and localized at sub-boundaries, over substantially larger areas than has previously been possible. This will enable mapping of dislocation structures in both naturally and experimentally deformed polycrystals, with potentially new insights into deformation processes in Earth’s upper mantle. 
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                            Micropillar compression of single-crystal single-phase (Co, Cu, Mg, Ni, Zn)O
                        
                    
    
            Bulk, polycrystalline (Co, Cu, Mg, Ni, Zn)O was synthesized using solid-state sintering. Micropillars were prepared and mechanically deformed along three crystallographic orientations: (001), (101), and (111). Pillars (001) and (111) cracked, while Pillar (101) remained intact. Pillars (001) and (101) exhibited activated slip systems, confirmed by a large stress drop, and the presence of slip bands, respectively. Schmid factor (SF) analysis was performed to examine the effect of grain orientations on dislocation activity and slip behavior. SF values range from 0 to 0.5, with non-zero values indicating potential for slip. Six slip systems exist in the (Co, Cu, Mg, Ni, Zn)O rock salt crystal structure: 1/2⟨110⟩11¯0. For the (001) orientation, four slip systems are potentially active (SF = 0.5). For the (101) orientation, there are four potentially active slip systems (SF = 0.25). For the (111) orientation, no potentially active slips systems exist (SF = 0). Dislocation structures, which were observed post-compression via transmission electron microscopy, demonstrated variations in size, number, and distribution across the pillar, depending on micropillar orientation. Entangled dislocations created misorientation in Pillar (001), which led to the possible formation of subgrains, while singular dislocations were observed in Pillar (101), and a lack of dislocations was observed in Pillar (111). Zener–Stroh type dislocation entanglement-mediated cracking is the proposed cause of the transgranular-type cracks in Pillar (001). The possible subgrain formation, or lack of formation, respectively, caused intergranular-type cracks to additionally form in Pillar (001), while Pillar (111) only exhibited transgranular-type brittle fracture. In combination, these findings highlight the importance of dislocation activity, without the need for elevated temperature, and grain orientation in controlling the mechanical deformation response in single-phase (Co, Cu, Mg, Ni, Zn)O. 
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                            - PAR ID:
- 10594646
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 125
- Issue:
- 3
- ISSN:
- 0003-6951
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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