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For continual scaling in microelectronics, new processes for precise high volume fabrication are required. Area-selective atomic layer deposition (ASALD) can provide an avenue for self-aligned material patterning and offers an approach to correct edge placement errors commonly found in top-down patterning processes. Two-dimensional transition metal dichalcogenides also offer great potential in scaled microelectronic devices due to their high mobilities and few-atom thickness. In this work, we report ASALD of MoS2 thin films by deposition with MoF6 and H2S precursor reactants. The inherent selectivity of the MoS2 atomic layer deposition (ALD) process is demonstrated by growth on common dielectric materials in contrast to thermal oxide/ nitride substrates. The selective deposition produced few layer MoS2 films on patterned growth regions as measured by Raman spectroscopy and time-of-flight secondary ion mass spectrometry. We additionally demonstrate that the selectivity can be enhanced by implementing atomic layer etching (ALE) steps at regular intervals during MoS2 growth. This area-selective ALD process provides an approach for integrating 2D films into next-generation devices by leveraging the inherent differences in surface chemistries and providing insight into the effectiveness of a supercycle ALD and ALE process.
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Modification of High-Surface-Area Carbons Using Self-Limited Atomic Layer Deposition
This study explores the application of Atomic Layer Deposition (ALD) to functionalize high-surface-area carbon supports with metal and metal oxide films and particles for applications in catalysis and electrocatalysis. The work reported here demonstrates that, through careful choice of precursors and absorption and reaction conditions, self-limited ALD growth on a high-surface-area carbon support can be achieved. Specific examples presented include the growth of conformal films of ZrO2 and SnO2 and the deposition of Ga2O3 and Pt particles on a carbon black support with a surface area of 250 m2·g−1. A novel strategy for controlling the Pt weight loading and producing sub-nanometer Pt particles on a carbon support using a single ALD cycle is also presented.
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- Award ID(s):
- 2323701
- PAR ID:
- 10636370
- Publisher / Repository:
- MDPI
- Date Published:
- Journal Name:
- Catalysts
- Volume:
- 14
- Issue:
- 11
- ISSN:
- 2073-4344
- Page Range / eLocation ID:
- 786
- Subject(s) / Keyword(s):
- carbon black ALD metal oxide metal
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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