The field-effect electron mobility of aqueous solution-processed indium gallium oxide (IGO) thin-film transistors (TFTs) is significantly enhanced by polyvinyl alcohol (PVA) addition to the precursor solution, a >70-fold increase to 7.9 cm2/Vs. To understand the origin of this remarkable phenomenon, microstructure, electronic structure, and charge transport of IGO:PVA film are investigated by a battery of experimental and theoretical techniques, including In K-edge and Ga K-edge extended X-ray absorption fine structure (EXAFS); resonant soft X-ray scattering (R-SoXS); ultraviolet photoelectron spectroscopy (UPS); Fourier transform-infrared (FT-IR) spectroscopy; time-of-flight secondary-ion mass spectrometry (ToF-SIMS); composition-/processing-dependent TFT properties; high-resolution solid-state1H,71Ga, and115In NMR spectroscopy; and discrete Fourier transform (DFT) analysis with ab initio molecular dynamics (MD) liquid-quench simulations. The71Ga{1H} rotational-echo double-resonance (REDOR) NMR and other data indicate that PVA achieves optimal H doping with a Ga···H distance of ∼3.4 Å and conversion from six- to four-coordinate Ga, which together suppress deep trap defect localization. This reduces metal-oxide polyhedral distortion, thereby increasing the electron mobility. Hydroxyl polymer doping thus offers a pathway for efficient H doping in green solvent-processed metal oxide films and the promise of high-performance, ultra-stable metal oxide semiconductor electronics with simple binary compositions.
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Chemical reactions as a means of installing adlayers on electron transport layers
Adlayers are often placed at metal-on-organic interfaces as a common strategy to alleviate damage during metal deposition by thermal evaporation. Methods of chemically installing adlayers have been recently demonstrated on organic semiconductors that address these interfacial issues while providing many secondary benefits. Chemical installation has yet to be attempted at the cathode-electron transport layer (ETL) interface within organic light-emitting devices (OLEDs), offering a powerful option to optimize electron injection, improve surface wetting, and reduce metal penetration. Here, a reaction between TPBi (2,2′,2′’-(1,2,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) and propylene oxide results in a controllable 1–3 nm thick layer of propylene oxide as shown by high-resolution X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDX). The reactive addition of the adlayer at temperatures below 40℃ does not affect the morphology of the thin film and reaches a high degree of coverage within 3 h. Integration of this layer into a phosphorescent OLED does not introduce any significant negative impact on device function. This result opens up the possibility of introducing further specific functionality into the adlayer to engineer OLED performance.
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- Award ID(s):
- 1956202
- PAR ID:
- 10651314
- Publisher / Repository:
- Elsevier
- Date Published:
- Journal Name:
- Applied Surface Science
- Volume:
- 678
- Issue:
- C
- ISSN:
- 0169-4332
- Page Range / eLocation ID:
- 161074
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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