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We demonstrate efficient on-chip green light generation via frequency upconversion in silicon nitride–thin-film lithium niobate (SiN-TFLN) hybrid waveguides, obtained by transfer printing LN coupons on selected areas of photonic integrated circuits (PICs). By utilizing modal phase matching (MPM), our devices achieve a high normalized conversion efficiency of 42.5% W⁻¹cm⁻²in a single-pass, 2.4-mm-long waveguide configuration. The SiN–LN transition in the waveguide inherently facilitates mode conversion, transforming a higher-order second-harmonic mode into a fundamental TE mode, ensuring coherent, narrow-linewidth, green light emission. Our waveguide platform gives rise to a wavelength shift of ∼1 nm for every 10 nm of waveguide width variation and temperature-induced wavelength tuning of ∼0.02 nm/°C. 

Abstract The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgapp-GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap. Electrical measurements show that the average sheet resistance of the implanted layer increases only by an order of magnitude from its pre-implantation value at a proton dose of ∼10¹³cm⁻²followed by 200 °C annealing. It is also shown that annealing reduces the implantation-induced optical absorption while still retaining a high electrical resistivity. 

We report a two-step etching process involving inductively coupled plasma (ICP) etching followed by wet chemical etching to achieve smooth and vertical sidewalls, being beneficial for AlGaN-based electronic and optoelectronic devices. The influence of ICP power on the roughness of etched sidewalls is investigated. It is observed that ICP etching alone does not produce smooth sidewalls, necessitating subsequent wet chemical etching using tetramethyl ammonium hydroxide (TMAH) to enhance sidewall smoothness and reduce tilt angle. The morphological evolution of the etched sidewalls with wet etch time for the device structures is also thoroughly investigated. Consistent etch results are achieved for Al_xGa_1-xN alloys with Al compositions up to 70%, indicating the effectiveness of our etching process. 

Light at mid-wave infrared- as well as visible-wavelengths are widely used in biophotonic applications with the promise of much improved healthcare. This talk will review on recent progress made at OSU towards developing photonic integrated circuit technologies at these wavelengths. 

In this paper, we report the molecular beam epitaxy-grown InGaN-quantum disks embedded within selective area epitaxy of GaN nanowires with both Ga- and N-polarities. A detailed comparative analysis of these two types of nanostructures is also provided. Compared to Ga-polar nanowires, N-polar nanowires are found to exhibit a higher vertical growth rate, flatter top, and reduced lateral overgrowth. InGaN quantum disk-related optical emission is observed from nanowires with both polarities; however, the N-polar structures inherently emit at longer wavelengths due to higher indium incorporation. Considering that N-polar nanowires offer more compelling geometry control compared to Ga-polar ones, we focus on the theoretical analysis of only N-polar structures to realize high-performance quantum emitters. A single nanowire-level analysis was performed, and the effects of nanowire diameter, taper length, and angle on guided modes, light extraction, and far-field emission were investigated. These findings highlight the importance of tailoring nanowire geometry and eventually optimizing the growth processes of III-nitride nanostructures. 

Abstract In this paper, we report, for the first time, a theoretical study on passive photonic devices including optical power splitters/combiners and grating couplers (GCs) operating at non-telecom wavelengths above 2 µ m in a monolithic GaSb platform. Passive components were designed to operate, in particular, at around 2.6 µ m for monolithic integration with active photonic devices on the III–V gallium antimonide material platform. The three popular types of splitters/combiners such as directional couplers, multimode interferometer-, and Y-branch-couplers were theoretically investigated. Based on our optimized design and rigorous analysis, fabrication-compatible 1 × 2 optical power splitters with less than 0.12 dB excess losses, large spectral bandwidth, and a 50:50 splitting ratio are achieved. For fiber-to-chip coupling, we also report the design of GCs with an outcoupling efficiency of ∼29% at 2.56 μ m and a 3 dB bandwidth of 80 nm. The results represent a significant step towards developing a complete functional photonic integrated circuits at mid-wave infrared wavelengths. 

Ultra-violet light emitting diodes (UV-LEDs) and lasers based on the III-Nitride material system are very promising since they enable compact, safe, and efficient solid-state sources of UV light for a range of applications. The primary challenges for UV LEDs are related to the poor conductivity of p-AlGaN layers and the low light extraction efficiency of LED structures. Tunnel junction-based UV LEDs provide a distinct and unique pathway to eliminate several challenges associated with UV LEDs1-4. In this work, we present for the first time, a reversed-polarization (p-down) AlGaN based UV-LED utilizing bottom tunnel junction (BTJ) design. We show that compositional grading enables us to achieve the lowest reported voltage drop of 1.1 V at 20 A/cm2 among transparent AlGaN based tunnel junctions at this Al-composition. Compared to conventional LED design, a p-down structure offers lower voltage drop because the depletion barrier for both holes and electrons is lower due to polarization fields aligning with the depletion field. Furthermore, the bottom tunnel junction also allows us to use polarization grading to realize better p- and n-type doping to improve tunneling transport. The epitaxial structure of the UV-LED was grown by plasma-assisted molecular beam epitaxy (PAMBE) on metal-organic chemical vapor deposition (MOCVD)-grown n-type Al0.3Ga0.7N templates. The transparent TJ was grown using graded n++-Al0.3Ga0.7N→ n++-Al0.4Ga0.6N (Si=3×1020 cm-3) and graded p++-Al0.4Ga0.6N →p++-Al0.3Ga0.7N (Mg=1×1020 cm-3) to take advantage of induced 3D polarization charges. The high number of charges at the tunnel junction region leads to lower depletion width and efficient hole injection to the p-type layer. The UV LED active region consists of three 2.5 nm Al0.2Ga0.8N quantum wells and 7 nm Al0.3Ga0.6N quantum barriers followed by 12 nm of p- Al0.46Ga0.64N electron blocking layer (EBL). The active region was grown on top of the tunnel junction. A similar LED with p-up configuration was also grown to compare the electrical performance. The surface morphology examined by atomic force microscopy (AFM) shows smooth growth features with a surface roughness of 1.9 nm. The dendritic features on the surface are characteristic of high Si doping on the surface. The composition of each layer was extracted from the scan by high resolution x-ray diffraction (HR-XRD). The electrical characteristics of a device show a voltage drop of 4.9 V at 20 A/cm2, which corresponds to a tunnel junction voltage drop of ~ 1.1 V. This is the best lowest voltage for transparent 30% AlGaN tunnel junctions to-date and is comparable with the lowest voltage drop reported previously on non-transparent (InGaN-based) tunnel junctions at similar Al mole fraction AlGaN. On-wafer electroluminescence measurements on patterned light-emitting diodes showed single peak emission wavelength of 325 nm at 100 A/cm2 which corresponds to Al0.2Ga0.8N, confirming that efficient hole injection was achieved within the structure. The device exhibits a wavelength shift from 330 nm to 325 nm with increasing current densities from 10A/cm2 to 100A/cm2. In summary, we have demonstrated a fully transparent bottom AlGaN homojunction tunnel junction that enables p-down reversed polarization ultraviolet light emitting diodes, and has very low voltage drop at the tunnel junction. This work could enable new flexibility in the design of future III-Nitride ultraviolet LEDs and lasers. 

Abstract This paper presents the design, material growth and fabrication of AlGaN laser structures grown by plasma-assisted molecular beam epitaxy. Considering hole transport to be the major challenge, our ultraviolet-A diode laser structures have a compositionally graded transparent tunnel junction, resulting in superior hole injection and a low contact resistance. By optimizing active region thickness, a five-fold improvement in photoluminescence intensity is obtained compared to that of our own non-optimized test structures. The electrical and optical characteristics of processed devices demonstrate only spontaneous emission with a peak wavelength at 354 nm. The devices operate up to a continuous-wave current density of 11.1 kA cm⁻²at room temperature, which is the highest reported for laser structures grown on AlGaN templates. Additionally, they exhibit a record-low voltage drop of 8.5 V to achieve this current density. 

AlGaN-based ultra-violet light emitting diodes (UV LEDs) are promising for a range of applications, including water purification, air disinfection and medical sensing. However, widespread adoption of UV LEDs is limited by the poor device efficiency. This has been attributed to the strong internal light absorption and poor electrical injection efficiency for the conventional UV LED structures, which typically use an absorbing p-GaN layer for p-type contact. Recent development of ultra-wide banggap AlGaN tunnel junctions enabled a novel UV LED design with the absence of the absorbing p-GaN contact layer. In this presentation, we will discuss recent progress of the AlGaN tunnel junctions and the development of tunnel junction-based UV LEDs, and discuss the challenges and future perspectives for the realization of high power, high efficiency UV LEDs.