skip to main content

Search for: All records

Creators/Authors contains: "Dabo, Ismaila"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Thermal rectification is an asymmetric heat transfer process where directionally dependent transport occurs along a given axis. In this work, geometric parameters that govern thermal rectification in solids composed of various semiconducting materials were investigated utilizing metalattice data for seven materials with pore sizes ranging between 2 and 30 nm. Using numerical simulation, thermal rectification was calculated at different thermal biases in single material systems, including silicon, cubic boron nitride, and diamond, among others. The largest thermal rectification for each material was exhibited in bilayer sample stacks that were thermally matched (i.e., the thermal resistance of each layer in the stack is equal in either forward or reverse direction). Of the materials tested, diamond provided the highest thermal rectification for all cases, with its best case achieving a thermal rectification of 57.2%. This novel thermal functionality will find application in advanced applications for temperature regulation, including resonator systems where thermal effects may significantly alter and/or degrade performance.
    Free, publicly-accessible full text available March 21, 2024
  2. Free, publicly-accessible full text available March 29, 2024
  3. Free, publicly-accessible full text available April 10, 2024
  4. Oxides of p-block metals (e.g., indium oxide) and semimetals (e.g., antimony oxide) are of broad practical interest as transparent conductors and light absorbers for solar photoconversion due to the tunability of their electronic conductivity and optical absorption. Comparatively, these oxides have found limited applications in solar-to-hydrogen photocatalysis primarily due to their high electronegativity, which impedes electron transfer for converting protons into molecular hydrogen. We have shown recently that inserting s-block metal cations into p-block oxides is effective at lowering electronegativities while affording further control of band gaps. Here, we explain the origins of this dual tunability by demonstrating the mediator role of s-block metal cations in modulating orbital hybridization while not contributing to frontier electronic states. From this result, we carry out a comprehensive computational study of 109 ternary oxides of s- and p-block metal elements as candidate photocatalysts for solar hydrogen generation. We downselect the most desirable materials using band gaps and band edges obtained from Hubbard-corrected density-functional theory with Hubbard parameters computed entirely from first principles, evaluate the stability of these oxides in aqueous conditions, and characterize experimentally four of the remaining materials, synthesized with high phase uniformity, to assess the accuracy of computational predictions. We thus proposemore »seven oxide semiconductors, including CsIn3O5, Sr2In2O5, and KSbO2 which, to the extent of our literature review, have not been previously considered as water-splitting photocatalysts.« less
    Free, publicly-accessible full text available March 6, 2024
  5. Tuning the work functions of materials is of practical interest for maximizing the performance of microelectronic and (photo)electrochemical devices, as the efficiency of these systems depends on the ability to control electronic levels at surfaces and across interfaces. Perovskites are promising compounds to achieve such control. In this work, we examine the work functions of more than 1000 perovskite oxide surfaces (ABO 3 ) using data-driven (machine-learning) analysis and identify the factors that determine their magnitude. While the work functions of the BO 2 -terminated surfaces are sensitive to the energy of the hybridized oxygen p bands, the work functions of the AO-terminated surfaces exhibit a much less trivial dependence with respect to the filling of the d bands of the B-site atom and of its electronic affinity. This study shows the utility of interpretable data-driven models in analyzing the work functions of cubic perovskites from a limited number of electronic-structure descriptors.
  6. Accurate computational predictions of band gaps are of practical importance to the modeling and development of semiconductor technologies, such as (opto)electronic devices and photoelectrochemical cells. Among available electronic-structure methods, density-functional theory (DFT) with the Hubbard U correction (DFT+U) applied to band edge states is a computationally tractable approach to improve the accuracy of band gap predictions beyond that of DFT calculations based on (semi)local functionals. At variance with DFT approximations, which are not intended to describe optical band gaps and other excited-state properties, DFT+U can be interpreted as an approximate spectral-potential method when U is determined by imposing the piecewise linearity of the total energy with respect to electronic occupations in the Hubbard manifold (thus removing self-interaction errors in this subspace), thereby providing a (heuristic) justification for using DFT+U to predict band gaps. However, it is still frequent in the literature to determine the Hubbard U parameters semiempirically by tuning their values to reproduce experimental band gaps, which ultimately alters the description of other total-energy characteristics. Here, we present an extensive assessment of DFT+U band gaps computed using self-consistent ab initio U parameters obtained from density-functional perturbation theory to impose the aforementioned piecewise linearity of the total energy. The studymore »is carried out on 20 compounds containing transition-metal or p-block (group III-IV) elements, including oxides, nitrides, sulfides, oxynitrides, and oxysulfides. By comparing DFT+U results obtained using nonorthogonalized and orthogonalized atomic orbitals as Hubbard projectors, we find that the predicted band gaps are extremely sensitive to the type of projector functions and that the orthogonalized projectors give the most accurate band gaps, in satisfactory agreement with experimental data. This work demonstrates that DFT+U may serve as a useful method for high-throughput workflows that require reliable band gap predictions at moderate computational cost.« less