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Abstract Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. Campione, et al. [ Phys. Rev. B , vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and the development of near zero refractive index photonics, nonlinear optics, thermal, and quantum optics in the ENZ regime. 

Abstract Optical metasurfaces with subwavelength thickness hold considerable promise for future advances in fundamental optics and novel optical applications due to their unprecedented ability to control the phase, amplitude, and polarization of transmitted, reflected, and diffracted light. Introducing active functionalities to optical metasurfaces is an essential step to the development of next-generation flat optical components and devices. During the last few years, many attempts have been made to develop tunable optical metasurfaces with dynamic control of optical properties (e.g., amplitude, phase, polarization, spatial/spectral/temporal responses) and early-stage device functions (e.g., beam steering, tunable focusing, tunable color filters/absorber, dynamic hologram, etc) based on a variety of novel active materials and tunable mechanisms. These recently-developed active metasurfaces show significant promise for practical applications, but significant challenges still remain. In this review, a comprehensive overview of recently-reported tunable metasurfaces is provided which focuses on the ten major tunable metasurface mechanisms. For each type of mechanism, the performance metrics on the reported tunable metasurface are outlined, and the capabilities/limitations of each mechanism and its potential for various photonic applications are compared and summarized. This review concludes with discussion of several prospective applications, emerging technologies, and research directions based on the use of tunable optical metasurfaces. We anticipate significant new advances when the tunable mechanisms are further developed in the coming years. 

Abstract Plasmonic structural color, in which vivid colors are generated via resonant nanostructures made of common plasmonic materials, such as noble metals have fueled worldwide interest in backlight-free displays. However, plasmonic colors that were withstanding ultrahigh temperatures without damage remain an unmet challenge due to the low melting point of noble metals. Here, we report the refractory hafnium nitride (HfN) plasmonic crystals that can generate full-visible color with a high image resolution of ∼63,500 dpi while withstanding a high temperature (900 °C). Plasmonic colors that reflect visible light could be attributed to the unique features in plasmonic HfN, a high bulk plasmon frequency of 3.1 eV, whichcould support localized surface plasmon resonance (LSPR) in the visible range. By tuning the wavelength of the LSPR, the reflective optical response can be controlled to generate the colors from blue to red across a wide gamut. The novel refractory plasmonic colors pave the way for emerging applications ranging from reflective displays to solar energy harvesting systems. 

We study coherent anti-Stokes Raman spectroscopy in air-filled anti-resonance hollow-core photonic crystal fiber, otherwise known as “revolver” fiber. We compare the vibrational coherent anti-Stokes Raman signal of N 2 , at ∼2331 cm −1 , generated in ambient air (no fiber present), with the one generated in a 2.96 cm of a revolver fiber. We show a ∼170 times enhancement for the signal produced in the fiber, due to an increased interaction path. Remarkably, the N 2 signal obtained in the revolver fiber shows near-zero non-resonant background, due to near-zero overlap between the laser field and the fiber cladding. Through our study, we find that the revolver fiber properties make it an ideal candidate for the coherent Raman spectroscopy signal enhancement. 

The direct interfacing of photonic crystal fiber to a metallic nanoantenna has widespread application in nanoscale imaging, optical lithography, nanoscale lasers, quantum communication,in vivosensing, and medical surgery. We report on the fabrication of a needle-shaped plasmonic nanoantenna on the end facet of a photonic crystal fiber using electron-beam-induced evaporation of platinum. We demonstrate the coupling of light from the fiber waveguide mode to the subwavelength nanoantenna plasmonic mode focusing down to the apex of the plasmonic needle using a polarization-resolved far-field side-scatter imaging technique. Our work provides an important step toward widespread application of optical fibers in nearfield spectroscopic techniques such as tip-enhanced Raman and fluorescence microscopy, single-photon excitation and quantum sensors, nanoscale optical lithography, and lab-on-fiber devices. 

Abstract Understanding of how particles and light interact in a liquid environment is vital for optical and biological applications. MoS₂has been shown to enhance nonlinear optical phenomena due to the presence of a direct excitonic resonance. Its use in biological applications is predicated on knowledge of how MoS₂interacts with ultrafast (< 1 ps) pulses. In this experiment, the interaction between two femtosecond pulses and MoS₂nanoparticles suspended in liquid is studied. We found that the laser pulses induce bubble formation on the surface of a nanoparticle and a nanoparticle aggregate then forms on the surface of the trapped bubble. The processes of formation of the bubble and the nanoparticle aggregation are intertwined. 

Using basic considerations on the average power absorbed in ultra-thin conducting films, we derive a closed-form expression for the average electric- field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE in ENZ media with realistic losses reaches a maximum value in the limit of ultra-small film thickness. The maximum value is reciprocal to the second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers of varying thickness grown by atomic layer deposition technique. The limiting behavior of FIE is shown in exact cases of the perfect absorption, normal incidence, and in a case of ultra- thin lossless ENZ films. Only in the case of lossless ENZ films FIE is inversely proportional to the second power of film thickness as it was predicted by S. Campione, et al. [Phys. Rev. B 91, 121408(R) (2015)]. We also show that FIE could achieve values as high as 100,000 in ultra-thin polar semiconductor films, which have losses as small as 0.02 close to the longitudinal optic (LO) phonon frequency. 

Enhanced and controlled light absorption as well as field confinement in an optically thin material are pivotal for energy-efficient optoelectronics and nonlinear optical devices. Highly doped transparent conducting oxide (TCO) thin films with near-zero permittivity can support ENZ modes in the so-called epsilon near zero (ENZ) frequency region, which can lead to perfect light absorption and ultra-strong electric field intensity enhancement (FIE) within the films. To achieve full control over absorption and FIE, one must be able to tune the ENZ material properties as well as the film thickness. Here, we experimentally demonstrate engineered absorption and FIE in aluminum doped zinc oxide (AZO) thin films via control of their ENZ wavelengths, optical losses, and film thicknesses, tuned by adjusting the atomic layer deposition (ALD) parameters such as dopant ratio, deposition temperature, and number of macro-cycles. We also demonstrate that under ENZ mode excitation, though the absorption and FIE are inherently related, the film thickness required for observing maximum absorption differs significantly from that for maximum FIE. This study on engineering ENZ material properties by optimizing the ALD process will be beneficial for the design and development of next- generation tunable photonic devices based on flat, zero-index optics.