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Abstract Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product ( V π L ), optical loss, and EO bandwidth. However, applications in optical imaging, optogenetics, and quantum science generally require devices operating in the visible-to-near-infrared (VNIR) wavelength range. Here, we realize VNIR amplitude and phase modulators featuring V π L ’s of sub-1 V ⋅ cm, low optical loss, and high bandwidth EO response. Our Mach-Zehnder modulators exhibit a V π L as low as 0.55 V ⋅ cm at 738 nm, on-chip optical loss of ~0.7 dB/cm, and EO bandwidths in excess of 35 GHz. Furthermore, we highlight the opportunities these high-performance modulators offer by demonstrating integrated EO frequency combs operating at VNIR wavelengths, with over 50 lines and tunable spacing, and frequency shifting of pulsed light beyond its intrinsic bandwidth (up to 7x Fourier limit) by an EO shearing method. 

The recent emergence of thin-film lithium niobate (TFLN) has extended the landscape of integrated photonics. This has been enabled by the commercialization of TFLN wafers and advanced nanofabrication of TFLN such as high-quality dry etching. However, fabrication imperfections still limit the propagation loss to a few dB/m, restricting the impact of this platform. Here, we demonstrate TFLN microresonators with a record-high intrinsic quality (Q) factor of twenty-nine million, corresponding to an ultra-low propagation loss of 1.3 dB/m. We present spectral analysis and the statistical distribution ofQfactors across different resonator geometries. Our work pushes the fabrication limits of TFLN photonics to achieve aQfactor within 1 order of magnitude of the material limit. 

Diamond offers good optical properties and hosts bright color centers with long spin coherence times. Recent advances in angled-etching of diamond, specifically with reactive ion beam angled etching (RIBAE), have led to successful demonstration of quantum photonic devices operating at visible wavelengths. However, larger devices operating at telecommunication wavelengths have been difficult to fabricate due to the increased mask erosion, arising from the increased size of devices requiring longer etch times. We evaluated different mask materials for RIBAE of diamond photonic crystal nanobeams and waveguides, and how their thickness, selectivity, aspect ratio and sidewall smoothness affected the resultant etch profiles and optical performance. We found that a thick hydrogen silesquioxane (HSQ) layer on a thin alumina adhesion layer provided the best etch profile and optical performance. The techniques explored in this work can also be adapted to other bulk materials that are not available heteroepitaxially or as thin films-on-insulator. 

Existing nonlinear-optic implementations of pure, unfiltered heralded single-photon sources do not offer the scalability required for densely integrated quantum networks. Additionally, lithium niobate has hitherto been unsuitable for such use due to its material dispersion. We engineer the dispersion and the quasi-phasematching conditions of a waveguide in the rapidly emerging thin-film lithium niobate platform to generate spectrally separable photon pairs in the telecommunications band. Such photon pairs can be used as spectrally pure heralded single-photon sources in quantum networks. We estimate a heralded-state spectral purity of >94% based on joint spectral intensity measurements. Further, a joint spectral phase-sensitive measurement of the unheralded time-integrated second-order correlation function yields a heralded-state purity of ( 86 ± 5 ) % . 

Abstract Diamond has attracted great interest as an appealing material for various applications ranging from classical to quantum optics. To date, Raman lasers, single photon sources, quantum sensing and quantum communication have been demonstrated with integrated diamond devices. However, studies of the nonlinear optical properties of diamond have been limited, especially at the nanoscale. Here, a metasurface consisting of plasmonic nanogap cavities is used to enhance both χ (2) and χ (3) nonlinear optical processes in a wedge-shaped diamond slab with a thickness down to 12 nm. Multiple nonlinear processes were enhanced simultaneously due to the relaxation of phase-matching conditions in subwavelength plasmonic structures by matching two excitation wavelengths with the fundamental and second-order modes of the nanogap cavities. Specifically, third-harmonic generation (THG) and second-harmonic generation (SHG) are both enhanced 1.6 × 10 7 -fold, while four-wave mixing is enhanced 3.0 × 10 5 -fold compared to diamond without the metasurface. Even though diamond lacks a bulk χ (2) due to centrosymmetry, the observed SHG arises from the surface χ (2) of the diamond slab and is enhanced by the metasurface elements. The efficient, deeply subwavelength diamond frequency converter demonstrated in this work suggests an approach for conversion of color center emission to telecom wavelengths directly in diamond.