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The demand for high power and high-frequency radio frequency (RF) power amplifiers makes AlGaN/GaN high electron mobility transistors (HEMTs) an attractive option due to their large critical field, high saturation velocity, and reduced device footprint as compared to Si-based counterparts. However, due to the high operating power densities, intense device self-heating occurs, which degrades the electrical performance and compromises the device’s reliability. The self-heating behavior of AlGaN/GaN HEMTs is known to be not solely a function of the dissipated power but is highly bias-dependent. As the operation of RF power amplifiers involves alteration of the device operation from fully-open to pinched-off channel conditions, it is critical to experimentally map the full channel temperature profile as a function of bias conditions. However, such measurement is difficult using optical thermography techniques due to the lack of optical access underneath the gate electrode, where the peak temperature is expected to occur.

To address this challenge, an AlGaN/GaN HEMT employing a transparent gate made of indium tin oxide (ITO) was fabricated, which enables full channel temperature mapping using Raman spectroscopy. It was found that the maximum channel temperature rise under a partially pinched-off condition is more than ∼93% higher than that for an openmore »channel condition, although both conditions would lead to an identical power dissipation level. The channel peak temperature probed in an ITO-gated device (underneath the gate) is ∼33% higher than the highest channel temperature that can be measured for a standard metal-gated AlGaN/GaN HEMT (i.e., next to the metal gate structure) operating under an identical bias condition. This indicates that one may significantly underestimate the device’s thermal resistance when solely relying on performing thermal characterization on the optically accessible region of a standard AlGaN/GaN HEMT. The outcomes of this study are important in terms of conducting a more accurate lifetime prediction of the device lifetime and designing thermal management solutions.

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Featuring broadband operation and high efficiency, gallium nitride (GaN)-based radio frequency (RF) power amplifiers are key components to realize the next generation mobile network. However, to fully implement GaN high electron mobility transistors (HEMT) for such applications, it is necessary to overcome thermal reliability concerns stemming from localized extreme temperature gradients that form under high voltage and power operation. In this work, we developed a deep-ultraviolet thermoreflectance thermal imaging capability, which can potentially offer the highest spatial resolution among diffraction-limited far-field optical thermography techniques. Experiments were performed to compare device channel temperatures obtained from near-ultraviolet and deep-ultraviolet wavelength illumination sources for the proof of concept of the new characterization method. Deep-ultraviolet thermoreflectance imaging will facilitate the study of device self-heating within transistors based on GaN and emerging ultra-wide bandgap semiconductors (e.g., β-Ga2O3, AlxGa1-xN, and diamond) subjected to simultaneous extreme electric field and heat flux conditions.

In this study, we compared the transient self-heating behavior of a homoepitaxial β-Ga2O3 MOSFET and a GaN-on-Si HEMT using nanoparticle-assisted Raman thermometry and thermoreflectance thermal imaging. The effectiveness of bottom-side and double-side cooling schemes using a polycrystalline diamond substrate and a diamond passivation layer were studied via transient thermal modeling. Because of the low thermal diffusivity of β-Ga2O3, the use of a β-Ga2O3 composite substrate (bottom-side cooling) must be augmented by a diamond passivation layer (top-side cooling) to effectively cool the device active region under both steady-state and transient operating conditions. Without no proper cooling applied, the steady-state device-to-package thermal resistance of a homoepitaxial β-Ga2O3 MOSFET is 2.6 times higher than that for a GaN-on-Si HEMT. Replacing the substrate with polycrystalline diamond (under a 6.5 μm-thick β-Ga2O3 layer) could reduce the steady-state temperature rise by 65% compared to that for a homoepitaxial β-Ga2O3 MOSFET. However, for high frequency power switching applications beyond the ~102 kHz range, bottom-side cooling (integration with a high thermal conductivity substrate) does not improve the transient thermal response of the device. Adding a diamond passivation over layer diamond not only suppresses the steadystate temperature rise, but also drastically reduces the transient temperature rise under high frequencymore »operating conditions.« less

Na-ion conducting solid electrolytes can enable both the enhanced safety profile of all-solid-state-batteries and the transition to an earth-abundant charge-carrier for large-scale stationary storage. In this work, we developed new perovskite-structured Na-ion conductors from the analogous fast Li-ion conducting Li 3 x La 2/3− x TiO 3 (LLTO), testing strategies of chemo-mechanical and defect engineering. Na x La 2/3−1/3 x ZrO 3 (NLZ) and Na x La 1/3−1/3 x Ba 0.5 ZrO 3 (NLBZ) were prepared using a modified Pechini method with varying initial stoichiometries and sintering temperatures. With the substitution of larger framework cations Zr 4+ and Ba 2+ on B- and A-sites respectively, NLZ and NLBZ both had larger lattice parameters compared to LLTO, in order to accommodate and potentially enhance the transport of larger Na ions. Additionally, we sought to introduce Na vacancies through (a) sub-stoichiometric Na : La ratios, (b) Na loss during sintering, and (c) donor doping with Nb. AC impedance spectroscopy and DC polarization experiments were performed on both Na 0.5 La 0.5 ZrO 3 and Na 0.25 La 0.25 Ba 0.5 ZrO 3 in controlled gas environments (variable oxygen partial pressure, humidity) at elevated temperatures to quantify the contributions of various possible charge carriers (sodiummore »ions, holes, electrons, oxygen ions, protons). Our results showed that the lattice-enlarged NLZ and NLBZ exhibited ∼19× (conventional sintering)/49× (spark plasma sintering) and ∼7× higher Na-ion conductivities, respectively, compared to unexpanded Na 0.42 La 0.525 TiO 3 . Moreover, the Na-ion conductivity of Na 0.5 La 0.5 ZrO 3 is comparable with that of NaNbO 3 , despite having half the carrier concentration. Additionally, more than 96% of the total conductivity in dry conditions was contributed by sodium ions for both compositions, with negligible electronic conductivity and little oxygen ion conductivity. We also identified factors that limited Na-ion transport: NLZ and NLBZ were both challenging to densify using conventional sintering without the loss of Na because of its volatility. With spark plasma sintering, higher density can be achieved. In addition, the NLZ perovskite phase appeared unable to accommodate significant Na deficiency, whereas NLBZ allowed some. Density functional theory calculations supported a thermodynamic limitation to creation of Na-deficient NLZ in favor of a pyrochlore-type phase. Humid environments generated different behavior: in Na 0.25 La 0.25 Ba 0.5 ZrO 3 , incorporated protons raised total conductivity, whereas in Na 0.5 La 0.5 ZrO 3 , they lowered total conductivity. Ultimately, this systematic approach revealed both effective approaches and limitations to achieving super-ionic Na-ion conductivity, which may eventually be overcome through alternative processing routes.« less