Search for: All records

Copper (Cu) interconnects are an increasingly important bottleneck in integrated circuits due to energy consumption and latency caused by the notable increase in Cu resistivity as dimensions decrease, primarily due to electron scattering at surfaces. Herein, the potential of a directional conductor, PtCoO₂, which has a low bulk resistivity and a distinctive anisotropic structure that mitigates electron surface scattering is showcased. Thin films of PtCoO₂of various thicknesses are synthesized by molecular beam epitaxy (MBE) coupled with a postdeposition annealing process and the superior quality of PtCoO₂films is demonstrated by multiple characterization techniques. The thickness‐dependent resistivity curve illustrates that PtCoO₂significantly outperforms effective Cu (Cu with TaN barriers) and Ru in resistivity below 20.0 nm with a more than 6x reduction compared to effective Cu below 6.0 nm, having a value of only 6.32 μΩ cm at 3.3 nm. It is determined that grain boundary scattering can still be improved for even lower resistivities in this material system through a combination of experiments and theoretical simulations. PtCoO₂is therefore a highly promising alternative material for future interconnect technologies promising lower resistivities, better stability, and significant improvements in energy efficiency and latency for advanced integrated circuits. 

Interconnect materials play the critical role of routing energy and information in integrated circuits. However, established bulk conductors, such as copper, perform poorly when scaled down beyond 10 nm, limiting the scalability of logic devices. Here, a multi‐objective search is developed, combined with first‐principles calculations, to rapidly screen over 15,000 materials and discover new interconnect candidates. This approach simultaneously optimizes the bulk electronic conductivity, surface scattering time, and chemical stability using physically motivated surrogate properties accessible from materials databases. Promising local interconnects are identified that have the potential to outperform ruthenium, the current state‐of‐the‐art post‐Cu material, and also semi‐global interconnects with potentially large skin depths at the GHz operation frequency. The approach is validated on one of the identified candidates, CoPt, using both ab initio and experimental transport studies, showcasing its potential to supplant Ru and Cu for future local interconnects. 

To support the ever-growing demand for faster, energy-efficient computation, more aggressive scaling of the transistor is required. Two-dimensional (2D) transition metal dichalcogenides (TMDs), with their ultra-thin body, excellent electrostatic gate control, and absence of surface dangling bonds, allow for extreme scaling of the channel region without compromising the mobility. New device geometries, such as stacked nanosheets with multiple parallel channels for carrier flow, can facilitate higher drive currents to enable ultra-fast switches, and TMDs are an ideal candidate for that type of next generation front-end-of-line field effect transistor (FET). TMDs are also promising for monolithic 3D (M3D) integrated back-end-of-line FETs due to their ability to be grown at low temperature and with less regard to lattice matching through van der Waals (vdW) epitaxy. To achieve TMD FETs with superior performance, two important challenges must be addressed: (1) complementary n- and p-type FETs with small and reliable threshold voltages are required for the reduction of dynamic and static power consumption per logic operation, and (2) contact resistance must be reduced significantly. We present here the underlying strengths and weaknesses of the wide variety of methods under investigation to provide scalable, stable, and controllable doping. It is our Perspective that of all the available doping methods, substitutional doping offers the ultimate solution for TMD-based transistors. 

Abstract Near-perfect light absorbers (NPLAs), with absorbance,$${{{{{{{\mathcal{A}}}}}}}}$$ $A$, of at least 99%, have a wide range of applications ranging from energy and sensing devices to stealth technologies and secure communications. Previous work on NPLAs has mainly relied upon plasmonic structures or patterned metasurfaces, which require complex nanolithography, limiting their practical applications, particularly for large-area platforms. Here, we use the exceptional band nesting effect in TMDs, combined with a Salisbury screen geometry, to demonstrate NPLAs using only two or three uniform atomic layers of transition metal dichalcogenides (TMDs). The key innovation in our design, verified using theoretical calculations, is to stack monolayer TMDs in such a way as to minimize their interlayer coupling, thus preserving their strong band nesting properties. We experimentally demonstrate two feasible routes to controlling the interlayer coupling: twisted TMD bi-layers and TMD/buffer layer/TMD tri-layer heterostructures. Using these approaches, we demonstrate room-temperature values of$${{{{{{{\mathcal{A}}}}}}}}$$ $A$=95% atλ=2.8 eV with theoretically predicted values as high as 99%. Moreover, the chemical variety of TMDs allows us to design NPLAs covering the entire visible range, paving the way for efficient atomically-thin optoelectronics. 

Abstract In oxygen (O₂)‐controlled cell culture, an indispensable tool in biological research, it is presumed that the incubator setpoint equals the O₂tension experienced by cells (i.e., pericellular O₂). However, it is discovered that physioxic (5% O₂) and hypoxic (1% O₂) setpoints regularly induce anoxic (0% O₂) pericellular tensions in both adherent and suspension cell cultures. Electron transport chain inhibition ablates this effect, indicating that cellular O₂consumption is the driving factor. RNA‐seq analysis revealed that primary human hepatocytes cultured in physioxia experience ischemia‐reperfusion injury due to cellular O₂consumption. A reaction‐diffusion model is developed to predict pericellular O₂tension a priori, demonstrating that the effect of cellular O₂consumption has the greatest impact in smaller volume culture vessels. By controlling pericellular O₂tension in cell culture, it is found that hypoxia vs. anoxia induce distinct breast cancer transcriptomic and translational responses, including modulation of the hypoxia‐inducible factor (HIF) pathway and metabolic reprogramming. Collectively, these findings indicate that breast cancer cells respond non‐monotonically to low O₂, suggesting that anoxic cell culture is not suitable for modeling hypoxia. Furthermore, it is shown that controlling atmospheric O₂tension in cell culture incubators is insufficient to regulate O₂in cell culture, thus introducing the concept of pericellular O₂‐controlled cell culture. 

Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution.