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The thermoelectric properties of semiconducting polymers are influenced by both the carrier concentration and the morphology that sets the pathways for charge transport. A combination of optical, morphological, and electrical characterization is used to assess the effect of the role of disorder on the thermoelectric properties of thin films of poly(3‐hexylthiophene) (P3HT) doped with 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F₄TCNQ). Controlled morphologies are formed by casting blends of regioregular (RR‐P3HT) and regiorandom (RRa‐P3HT) and then subsequently doped with F₄TCNQ from the vapor phase. Optical spectroscopy and X‐ray scattering show that vapor phase doping induces order in the disordered regions of thin films and increases the long‐range connectivity of the film. The thermoelectric properties are assessed as a function of composition and it is shown that while the Seebeck coefficient is affected by structural ordering, the electrical conductivity and power factor are more strongly correlated with the long‐range connectivity of ordered domains.

 

Polarized resonant soft X-ray scattering (P-RSoXS) has emerged as a powerful synchrotron-based tool that combines the principles of X-ray scattering and X-ray spectroscopy. P-RSoXS provides unique sensitivity to molecular orientation and chemical heterogeneity in soft materials such as polymers and biomaterials. Quantitative extraction of orientation information from P-RSoXS pattern data is challenging, however, because the scattering processes originate from sample properties that must be represented as energy-dependent three-dimensional tensors with heterogeneities at nanometre to sub-nanometre length scales. This challenge is overcome here by developing an open-source virtual instrument that uses graphical processing units (GPUs) to simulate P-RSoXS patterns from real-space material representations with nanoscale resolution. This computational framework – calledCyRSoXS(https://github.com/usnistgov/cyrsoxs) – is designed to maximize GPU performance, including algorithms that minimize both communication and memory footprints. The accuracy and robustness of the approach are demonstrated by validating against an extensive set of test cases, which include both analytical solutions and numerical comparisons, demonstrating an acceleration of over three orders of magnitude relative to the current state-of-the-art P-RSoXS simulation software. Such fast simulations open up a variety of applications that were previously computationally unfeasible, including pattern fitting, co-simulation with the physical instrument foroperandoanalytics, data exploration and decision support, data creation and integration into machine learning workflows, and utilization in multi-modal data assimilation approaches. Finally, the complexity of the computational framework is abstracted away from the end user by exposingCyRSoXSto Python usingPybind. This eliminates input/output requirements for large-scale parameter exploration and inverse design, and democratizes usage by enabling seamless integration with a Python ecosystem (https://github.com/usnistgov/nrss) that can include parametric morphology generation, simulation result reduction, comparison with experiment and data fitting approaches.

 

Doping is required to increase the electrical conductivity of organic semiconductors for uses in electronic and energy conversion devices. The limited number of commonly used p-type dopants suggests that new dopants or doping mechanisms could improve the efficiency of doping and provide new means for processing doped polymers. Drawing on Lewis acid–base pair chemistry, we combined Lewis acid dopant B(C 6 F 5 ) 3 (BCF) with the weak Lewis base benzoyl peroxide (BPO). The detailed behavior of p-type doping of the model polymer poly(3-hexylthiophene) (P3HT) with this Lewis acid–base pair in solution was examined. Solution 19 F-NMR spectra confirmed the formation of the expected counterion, as well as side products from reactions with solvent. BCF : BPO was also found to efficiently dope a range of semiconducting polymers with varying chemical structures demonstrating that the BCF : BPO combination has an effective electron affinity of at least 5.3 eV. In thin films of regioregular P3HT cast from the doped solutions, delocalized polarons formed due to the large counterions leading to a large polaron-counterion distance. At and above 0.2 eq. BCF : BPO doping, amorphous areas of the film became doped, disrupting the structural order of the films. Despite the change in structural order, thin films of regioregular P3HT doped with 0.2 eq. BCF : BPO had a conductivity of 25 S cm −1 . This study demonstrates the effectiveness of a two-component Lewis acid–base doping mechanism and suggests additional two-component Lewis acid–base chemistries should be explored. 

Resonant soft X-ray scattering (RSoXS) probes structure with chemical sensitivity that is useful for determining the morphology of multiblock copolymers. However, the hyperspectral scattering data produced by this technique can be challenging to interpret. Here, we use computational scattering simulations to extract the microstructure of a model triblock copolymer from the energy-dependent scattering from RSoXS. An ABC triblock terpolymer formed from poly(4-methylcaprolactone) (P4MCL), poly(2,2,2-trifluoroethylacrylate) (PTFEA), and poly (dodecylacrylate) (PDDA), P4MCL- block -PTFEA- block -PDDA, was synthesized as the model triblock system. Through quantitative evaluation of simulated scattering data from a physics-informed set of candidate structure models against experimental RSoXS data, we find the best agreement with hexagonally packed core–shell cylinders. This result is also consistent with electron-density reconstruction from hard X-ray scattering data evaluated against electron-density maps generated with the same model set. These results demonstrate the utility of simulation-guided scattering analysis to study complex microstructures that are challenging to image by microscopy. 

Semiconducting polymers have the potential to be used in thermoelectric devices that are lightweight, flexible, and fabricated using solution processing. Because of the structural and energetic disorder of these polymers, the relationship between their structure and thermoelectric properties is complex. We review how interrelated processing routes and doping methods affect the thermoelectric properties of polymers. The studies highlighted here have led to correlations between thermopower and electrical conductivity that can be described by theories under investigation. With greater understanding of the materials properties behind their performance, semiconducting polymers can be used in future power generation or cooling devices. 

We present a series of new dopants based on a bicyclcic guanidine-type structure, 1,5,7-triazabicyclo[4.4.0]dec-5-ene ( TBD ), for organic semiconductors. A series of TBD derivatives that were alkylated at the 7-position were synthesized and their physical properties were determined. These stable dopants were shown to be effective n-type dopants for [6,6]-phenyl- C 61 -butyric acid methyl ester (PC 61 BM), poly{[ N , N ′-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]- alt -5,5′-(2,2′-bithiophene)} (P(NDI2OD-T2)) and 3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3- d :2′,3′- d ′]- s -indaceno[1,2- b :5,6- b ′]dithiophene (ITIC). Films of PC 61 BM doped with 10 mol% of a dimeric derivative of TBD had electrical conductivities of 0.065 S cm −1 . The utility of the dopants was further shown by doping electron transport layers of PC 61 BM with 2TBD-C10 for methyl ammonium lead iodide (MAPbI 3 ) solar cells leading to improved fill factors and PCEs relative to undoped ETLs. 

Thin films of amorphous small molecule semiconductors are widely used in organic light emitting displays and have promising applications in solar cells and thermoelectric devices. Adding dopants increases the conductivity of organic semiconductors, but high concentrations of dopants can disrupt their structural ordering, alter the shape of the electronic density of states in the material, and increase the effects of Coulomb interactions on charge transport. Electrical doping of the solution processable hole-transport material 2,2′,7,7′-tetrakis[ N , N -di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD) was studied with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4 TCNQ) as a p-type dopant. Infiltration of F 4 TCNQ from the vapor phase into films of spiro-OMeTAD provided a route to highly doped films with up to 39 ± 2 mol% doping. Structural characterization confirmed that the films remain amorphous even at the highest doping levels with no apparent phase separation. We quantitatively determined the carrier concentration using UV-Vis spectroscopy to interpret the evolution of the electrical conductivity. Over the range of carrier concentrations (10 19 –10 20 1 cm −3 ), the electrical conductivity increased no more than linearly with carrier concentration, while the thermopower had a small increase with carrier concentration. The trends in conductivity and thermopower were related to the unique electronic structure of spiro-OMeTAD, which is able to support two carriers per molecule. Temperature-dependent conductivity measurements were used to further analyze the transport mechanism.