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Efficient optical coupling between nano‐ and macroscale areas is strongly suppressed by the diffraction limit. This work presents a possible solution to this fundamental problem via the experimental fabrication, characterization, and comprehensive theoretical analysis of structures referred to as “photonic funnels.” The funnels represent a novel composite material platform that combines hyperbolic dielectric response with geometry‐assisted optical confinement. Experimentally, funneling of mid‐infrared light through openings with diameters as small as 1/25th of the free space wavelength (λ₀) is demonstrated. By analyzing the optical response of the funnels, as fabricated, both confinement of mid‐infrared radiation to the λ₀/25 areas and efficient outcoupling of light from deep subwavelength areas are confirmed.

 

We demonstrate a monolithic all-epitaxial resonant-cavity architecture for long-wave infrared photodetectors with substrate-side illumination. An nBn detector with an ultra-thin (t≈350 nm) absorber layer is integrated into a leaky resonant cavity, formed using semi-transparent highly doped (n++) epitaxial layers, and aligned to the anti-node of the cavity's standing wave. The devices are characterized electrically and optically and demonstrate an external quantum efficiency of ∼25% at T=180 K in an architecture compatible with focal plane array configurations.

 

We demonstrate a room-temperature all-epitaxial guided-mode resonance light-emitting diode operating in the mid-wave infrared. The device comprises a dielectric waveguide with an AlGaAsSb p−i−n diode core, below a layer of grating-patterned GaSb and above a highly doped, and thus, low index, InAsSb layer. Light emitted from the device active region into propagating modes in the waveguide scatters into free space via the GaSb grating, giving rise to spectrally narrow features that shift with emission angle across much of the mid-wave infrared. For collection angles approaching 0°, we are able to obtain linewidths of ∼2.4 meV across the spectral/angular emission of the LED, corresponding to λ/Δλ∼570. Fine control of emission wavelength can be achieved by tuning the applied current, which causes a redshift of approximately 20 nm due to the thermo-optic effect. The presented device has the potential for use in compact, high bandwidth, and low-cost mid-wave infrared sensing applications requiring spectral discrimination.

 

The incorporation of dilute concentrations of bismuth into traditional III–V alloys produces significant reductions in bandgap energy presenting unique opportunities in strain and bandgap engineering. However, the disparity between the ideal growth conditions for the host matrix and those required for substitutional bismuth incorporation has caused the material quality of these III–V–Bi alloys to lag behind that of conventional III–V semiconductors. InSb1−xBix, while experimentally underexplored, is a promising candidate for high-quality III–V–Bi alloys due to the relatively similar ideal growth temperatures for InSb and III–Bi materials. By identifying a highly kinetically limited growth regime, we demonstrate the growth of high-quality InSb1−xBix by molecular beam epitaxy. X-ray diffraction and Rutherford backscattering spectrometry (RBS) measurements of the alloy's bismuth concentration, coupled with smooth surface morphologies as measured by atomic force microscopy, suggest unity-sticking bismuth incorporation for a range of bismuth concentrations from 0.8% to 1.5% as measured by RBS. In addition, the first photoluminescence was observed from InSb1−xBix and demonstrated wavelength extension up to 7.6 μm at 230 K, with a bismuth-induced bandgap reduction of ∼29 meV/% Bi. Furthermore, we report the temperature dependence of the bandgap of InSb1−xBix and observed behavior consistent with that of a traditional III–V alloy. The results presented highlight the potential of InSb1−xBix as an alternative emerging candidate for accessing the longwave-infrared.

 

There are a range of fundamental challenges associated with scaling optoelectronic devices down to the nano-scale, and the past decades have seen significant research dedicated to the development of sub-diffraction-limit optical devices, often relying on the plasmonic response of metal structures. At the longer wavelengths associated with the mid-infrared, dramatic changes in the optical response of traditional nanophotonic materials, reduced efficiency optoelectronic active regions, and a host of deleterious and/or parasitic effects makes nano-scale optoelectronics at micro-scale wavelengths particularly challenging. In this Perspective, we describe recent work leveraging a class of infrared plasmonic materials, highly doped semiconductors, which not only support sub-diffraction-limit plasmonic modes at long wavelengths, but which can also be integrated into a range of optoelectronic device architectures. We discuss how the wavelength-dependent optical response of these materials can serve a number of different photonic device designs, including dielectric waveguides, epsilon-near-zero dynamic optical devices, cavity-based optoelectronics, and plasmonic device architectures. We present recent results demonstrating that the highly doped semiconductor class of materials offers the opportunity for monolithic, all-epitaxial, device architectures out-performing current state of the art commercial devices, and discuss the perspectives and promise of these materials for infrared nanophotonic optoelectronics.

 

We demonstrate efficient filtering of coherent light from a broad spectral background. A Michelson interferometer is used to effectively filter out the coherent emission of mid-infrared lasers from the co-propagating incoherent emission of a broadband thermal source. We show coherent light suppression as high as 16.9 dB without any modification of the broadband incoherent background spectrum. In addition, we demonstrate the ability to measure the spatially dependent (incoherent) thermal emission from a patterned surface, using our filter to remove a coherent signal which would otherwise overload our detection system. The demonstrated filter is rapidly tunable and wavelength-flexible, and has potential for imaging and spectroscopy applications in the presence of an otherwise overpowering coherent signal.

 

Optoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications in communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer metal” platform for the plasmonic enhancement of mid-infrared devices. However, while typical plasmonic materials can be patterned to engineer strong localized resonances, the lack of lateral control in conventional MBE growth makes it challenging to create similar structures compatible with monolithically grown plasmonic InAs. To this end, we report the growth of highly doped InAs plasmonic ridges for the localized resonant enhancement of mid-IR emitters and absorbers. Furthermore, we demonstrate a method for regaining a planar surface above plasmonic corrugations, creating a pathway to epitaxially integrate these structures into active devices that leverage conventional growth and fabrication techniques. 

III–V semiconductor type-II superlattices (T2SLs) are a promising material system with the potential to significantly reduce the dark current of, and thus realize high-performance in, infrared photodetectors at elevated temperatures. However, T2SLs have struggled to meet the performance metrics set by the long-standing infrared detector material of choice, HgCdTe. Recently, epitaxial plasmonic detector architectures have demonstrated T2SL detector performance comparable to HgCdTe in the 77–195 K temperature range. Here, we demonstrate a high operating temperature plasmonic T2SL detector architecture with high-performance operation at temperatures accessible with two-stage thermoelectric coolers. Specifically, we demonstrate long-wave infrared plasmonic detectors operating at temperatures as high as 230 K while maintaining dark currents below the “Rule 07” heuristic. At a detector operating temperature of 230 K, we realize 22.8% external quantum efficiency in a detector absorber only 372 nm thick ([Formula: see text]) with a peak specific detectivity of 2.29 × 10⁹cm Hz^1∕2W⁻¹at 9.6  μm, well above commercial detectors at the same operating temperature.